FKI07174 Allicdata Electronics
Allicdata Part #:

FKI07174-ND

Manufacturer Part#:

FKI07174

Price: $ 0.31
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: MOSFET N-CH 75V 31A TO-220F
More Detail: N-Channel 75V 31A (Tc) 38W (Tc) Through Hole TO-22...
DataSheet: FKI07174 datasheetFKI07174 Datasheet/PDF
Quantity: 1000
7000 +: $ 0.27944
Stock 1000Can Ship Immediately
$ 0.31
Specifications
FET Feature: --
Power Dissipation (Max): 38W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 22.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Gate Charge (Qg) (Max) @ Vgs: 36.2nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 25V
Description

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FKI07174 is a type of Field-Effect Transistor (FET). It is a type of insulated-gate transistor, which is a modern replacement for the traditional MOSFET transistor in integrated circuits. The FKI07174 is capable of switching high-power (150 amps) and high current (200W) levels, making it suitable for a wide array of applications.

The basic operation of the FKI07174 is similar to that of an MOSFET, but the major difference between the two is in the internal protection against destructive current feedback. The FKI07174 features an additional internal diode to the substrate, referred to as an insulated-gate transistor (IGT). This diode prevents charging of the gate, resulting in a lower voltage drop on the FKI07174 device, and consequently a higher power efficiency. It also helps to reduce power losses due to current leakage.

The FKI07174 is used in a wide range of applications, from small signal applications to power and control applications. It can be used for the amplification of high-frequency signals, and has the capacity to switch rapidly between high and low power. It is also used extensively in power amplifier circuits, as well as for controlling switching in high-power applications. In addition, it is also used in battery management systems, and for high-current switching in automotive, high-resolution and test applications.

The FKI07174 is designed with an insulated-gate to reduce power losses from current leakage. This allows the device to operate with higher power and current levels, while preventing the gate from being charged with higher voltages. In addition, the diode protection provides protection against feedback currents, which can cause a short circuit. The insulation also helps to reduce overall power losses and short circuit damage. As such, the FKI07174 is suitable for use in high-voltage and high-current applications.

The FKI07174 is available in Single and Dual package configurations. The single package provides an optimal thermal performance and is more cost effective, while the dual package provides additional protection from current leakage. Additionally, the dual package also provides additional electrical stability and improved thermal performance.

The FKI07174 is easy to use and can be used in various applications due to its above average current and power ratings. It has the ability to handle large amounts of power, while being resistant to thermal damage and providing good performance in high-voltage and high-current switching applications. Additionally, the FKI07174 has a good cost-benefits ratio and is suitable for use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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