Allicdata Part #: | FKI06108-ND |
Manufacturer Part#: |
FKI06108 |
Price: | $ 0.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | MOSFET N-CH 60V 39A TO-220F |
More Detail: | N-Channel 60V 39A (Tc) 38W (Tc) Through Hole TO-22... |
DataSheet: | FKI06108 Datasheet/PDF |
Quantity: | 1000 |
7000 +: | $ 0.27944 |
Vgs(th) (Max) @ Id: | 2.5V @ 650µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2520pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8.8 mOhm @ 28.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 39A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FKI06108 is a single enhancement-mode V-MOSFET (Voltage-controlled Metal–Oxide–Semiconductor Field Effect Transistor) manufactured by ROHM Semiconductor. It belongs to a family of insulated-gate field-effect transistors (IGFETs) that are constructed with a metal gate electrode placed over a semiconductor channel through which current can flow.
The FKI06108 is a three-pin device with a 50V drain-source voltage rating. It has a maximum drain current of 1.7A and a maximum gate threshold voltage of 2.6V. It has very low input capacitance (2.8pF) and output capacitance (3.3pF). This makes it ideal for applications involving high-speed switching, such as switching power regulators and motor control.
The working principle of this transistor is relatively simple. A positive voltage applied to the gate and the source creates an electric field that causes current to flow from the source to the drain. When the gate voltage is held steady, the transistor is said to be \'ON\'. The current flowing through the transistor is proportional to the voltage applied to the gate.
To turn the transistor \'OFF\', the gate voltage is reduced to zero. This means that no electrons will be able to flow from the source to the drain. During this \'OFF\' state, the transistor acts as an open circuit. The transistor will remain in this \'OFF\' state until a positive voltage is reapplied to the gate.
The FKI06108 has multiple applications in the industrial, automotive, and consumer electronics sectors. This dual-mode transistor is used for many high-speed switching applications, such as switching power regulators and motor control. It is also used for signal processing applications, such as amplifiers and mixers. In addition, the FKI06108 can be used to regulate current in a variety of circuits, such as light dimmers, motor speed controllers and motor drives.
In conclusion, the FKI06108 is a single enhancement-mode V-MOSFET manufactured by ROHM Semiconductor. It has a drain-source voltage rating of 50V and a maximum drain current of 1.7A. It is ideal for applications involving high-speed switching and signal processing. In addition, the FKI06108 can be used for a variety of current regulation purposes.
The specific data is subject to PDF, and the above content is for reference
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