FM25L16B-GTR Integrated Circuits (ICs) |
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Allicdata Part #: | 428-3578-2-ND |
Manufacturer Part#: |
FM25L16B-GTR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FRAM 16K SPI 20MHZ 8SOIC |
More Detail: | FRAM (Ferroelectric RAM) Memory IC 16Kb (2K x 8) S... |
DataSheet: | FM25L16B-GTR Datasheet/PDF |
Quantity: | 654 |
Series: | F-RAM™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FRAM |
Technology: | FRAM (Ferroelectric RAM) |
Memory Size: | 16Kb (2K x 8) |
Clock Frequency: | 20MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Base Part Number: | FM25L16 |
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The FM25L16B-GTR is a 16-Kbit non-volatile serial electrically erasable programmable memory (EEPROM). It is specially designed to stabilize work in harsher environments. It is widely used in medium- to high-durability applications such as automotive, industrial, and medical equipment, communications, and environmental sensing.
This EEPROM simplifies system design with a variety of features and options. The device is available in multiple packages with WSON or VFBGA designs and is able to meet the needs of tight spaces. It offers fast program/erase performance and low supply current. Its built-in E2RM (Electrical Erasability) feature simplifies life-cycle management without erasing the entire device. Data protection is also ensured with internal power-on-reset, write inhibit, and a write enable latch.
The FM25L16B-GTR consists of memory cells, control circuits and decoder circuits. Its memory cell is the smallest unit of information processing, which consists of a group of transistors and capacitors. In order to register data in memory cells, electrons need to be charged on and discharged off the capacitors. When it is powered on, the control circuit passes power supply current to all memory cells and initializes related conditions, such as the voltage value of data line and address line so that the memory cells operate normally. After the voltage of data line, address line and command line are set, the stored information can be read, wiped and rewritten.
By using the four-phase clock pulse, the FM25L16B-GTR EEPROM supports 1-byte and 2-byte write-in operations in addition to the 2-byte page write-in mode operation. During the programming and erasing process, the FM25L16B-GTR offers two operations modes: the standard (ST) mode and the high speed (HS) mode. For the standard mode, the programming and erasing time are 160 us and 100 ms, respectively. For the high speed mode, the programming and erasing time are 2 us and 500 us, respectively.
The FM25L16B-GTR works well even at temperatures from -40°C to +105°C. It is a perfect choice for applications that require high memory density, low power consumption and fast access time. Its low power consumption helps prevent damages from over current, which is ideal for wearables and other low power devices. This device also comes with a watchdog timer for reliable data protection. All these features make it an ideal solution for memory solutions applications in harsh environments.
The specific data is subject to PDF, and the above content is for reference
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