FM25640B-GA Integrated Circuits (ICs) |
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Allicdata Part #: | 1140-1007-ND |
Manufacturer Part#: |
FM25640B-GA |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Ramtron |
Short Description: | IC FRAM 64K SPI 4MHZ 8SOIC |
More Detail: | FRAM (Ferroelectric RAM) Memory IC 64Kb (8K x 8) S... |
DataSheet: | FM25640B-GA Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | F-RAM™ |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
Memory Type: | Non-Volatile |
Memory Format: | FRAM |
Technology: | FRAM (Ferroelectric RAM) |
Memory Size: | 64Kb (8K x 8) |
Clock Frequency: | 4MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 125°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Description
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Memory FM25640B-GA is a Nonvolatile Ferroelectric Random Access Memory chip developed and manufactured by Fujitsu Microelectronics Limited, which is a Japanese multinational information technology equipment and services company. The FM25640B-GA chip has a high endurance (at least 10^5 read/write cycles), a wide temperature range (-40°C to 85°C) and is a low-cost memory solution. The main application field of FM25640B-GA is in embedded systems, such as industrial control systems, home appliances, automotive systems and consumer electronics. It is mainly used for the data storage purpose and for booting in embedded systems. In addition, FM25640B-GA is also applicable for data logging, such as temperature and humidity records. In terms of the working principle of FM25640B-GA, it is in the form of a ferroelectric transistor RAM or F-RAM, which is a memory technology based on the property of ferroelectrics. Specifically, an F-RAM cell is made of two ferroelectric capacitors and one transistor. High and low electrical charges can be stored in the two ferroelectric capacitors independently, so the F-RAM cell can store two bits of 0 or 1 in the form of binary data. Since the F-RAM cells do not require refreshing, it is a nonvolatile memory. The ferroelectric materials used also have high read/write endurance (up to 10^6 times). Moreover, the memory cells of F-RAM also have low leakage currents. This means that a charge stored in the cell will not dissipate quickly, hence data in the memory can maintain for a long time even when the power is off. In terms of the interface, FM25640B-GA is compatible with serial peripheral interfaces (SPI). The SPI connnection requires only four pins : CS (Chip select), SCK (Serial clock), SI (Serial Input) and SO (Serial Output). Thus, the memory can be easily connected to other components in the system. In conclusion, FM25640B-GA is a nonvolatile F-RAM chip which has high endurance, low cost and wide temperature range. It can be used for booting, data storage and data logging in embedded systems. It is convenient to be connected to other components as it requires only four pins for SPI connection.The specific data is subject to PDF, and the above content is for reference
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