Allicdata Part #: | FM25V20-DGRA-ND |
Manufacturer Part#: |
FM25V20-DG |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FRAM 2M SPI 40MHZ 8TDFN |
More Detail: | FRAM (Ferroelectric RAM) Memory IC 2Mb (256K x 8) ... |
DataSheet: | FM25V20-DG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | F-RAM™ |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FRAM |
Technology: | FRAM (Ferroelectric RAM) |
Memory Size: | 2Mb (256K x 8) |
Clock Frequency: | 40MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | SPI |
Voltage - Supply: | 2 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-WDFN Exposed Pad |
Supplier Device Package: | 8-TDFN (5x6) |
Base Part Number: | FM25V20 |
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FM25V20-DG: Memory
FM25V20-DG is a non-volatile static random access memory (SRAM) that provides “instant on” data retention even after power interruption. It can stand functions from -40℃ to +85℃ in the operational environment and comes with a wide voltage range from 1.7 to 3.6V, making it an ideal choice for applications that require data retention over time.
Application Field
FM25V20-DG is widely used in various real-time applications. It is suitable for any system that deals with unpredictable power interruptions, such as game consoles, home entertainment devices, automotive electronics, and industrial controllers. The FM25V20-DG memory can be used in a variety of embedded systems where there is a need for data to be retained, such as digital controllers and timers, embedded IP cameras, routers, and more.
FM25V20-DG is also suitable for battery-powered applications. It can retain data for up to 10 years without power in the absence of static discharge, making it ideal for slow data loggers, military systems, and other long-lived applications. FM25V20-DG memory is usually packaged in small form-factor packages, making it perfect for space-constrained applications.
Working Principle
FM25V20-DG memory uses a static RAM cell architecture, which is divided into two parts. The first part is a CMOS NAND gate, and the second is a 6-transistor SRAM cell. The CMOS NAND gate acts as a switch, and controls the flow of electricity into and out of the SRAM cell. When writing data, the switch is closed and the SRAM cells are powered. When data needs to be read, the switch is opened and the SRAM cells are disconnected, allowing the data to be read.
FM25V20-DG memory has an internal data retention circuit, which ensures that the stored data is retained even when the power is cut off and the switch is opened. This is achieved by monitoring the voltage and current on the CMOS NAND gate, and when the power drops below a certain level, the internal circuit sens
The specific data is subject to PDF, and the above content is for reference
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