FM25C160B-GTR Allicdata Electronics

FM25C160B-GTR Integrated Circuits (ICs)

Allicdata Part #:

428-3435-2-ND

Manufacturer Part#:

FM25C160B-GTR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FRAM 16K SPI 20MHZ 8SOIC
More Detail: FRAM (Ferroelectric RAM) Memory IC 16Kb (2K x 8) S...
DataSheet: FM25C160B-GTR datasheetFM25C160B-GTR Datasheet/PDF
Quantity: 5000
Stock 5000Can Ship Immediately
Specifications
Series: F-RAM™
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 16Kb (2K x 8)
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: FM25C160
Description

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FM25C160B-GTR Memory

The FM25C160B-GTR is a memory device that functions as a storage element, allowing permanent or temporary data storage, depending on the usage. In essence, memory devices serve both to store and to output data. It has the ability to store up to 16mbit of data and has a high speed serial interface and typical read or write time of 10us. The combination of its low power consumption, small size and low voltage requirements make it suitable for many applications.

The FM25C160B-GTR memory device can be categorized into two types, static RAM (SRAM) and dynamic RAM (DRAM). Static RAM offers faster access and lower power consumption than dynamic RAM and is used for providing data that is required often and quickly. One advantage of SRAM is that it does not need to be ‘refreshed’ like DRAM does, and so it offers a low-power solution for storing volatile or non-volatile data. Dynamic RAM, on the other hand, is slower than SRAM and requires more power. It is typically used for RAM that needs to be frequently accessed.

Application Fields of FM25C160B-GTR Memory

The low power consumption and small size of the FM25C160B-GTR memory allow for a variety of applications. It is suitable for embedded applications such as computer printers, viewfinders, digital cameras, embedded control systems, and military applications. It is also used for non-volatile storage in some consumer electronics and automotive applications. For example, the FM25C160B-GTR memory can be used in a car navigation system to store map data, in a digital picture frame to store images, or in a portable medical device to store medical data.

In addition to its embedded applications, the FM25C160B-GTR memory can also be used in communications and networking systems. It is suitable for voice/data storage and communications in packet or relay switched systems, where it can securely store data, information, and control messages. It is also used in handheld wireless devices such as cell phones, PDAs, and the like.

Working Principle of FM25C160B-GTR Memory

The FM25C160B-GTR memory works by storing data as electrical charges on its memory cells. Each memory cell is composed of a transistor and two capacitors, one of which holds the data, and the other used for refreshing the memory. When a request is made to a memory cell, its transistor is turned on, and the corresponding data bit is sent to the output. To write data to the memory, a voltage is applied to the write line and the data bit is applied to the other bit line. The write line applies the correct polarizing voltage to the cell, thereby writing the data bit.

To read a data bit from the memory, a voltage is applied to the read line and the data bit is then transferred to the outputs. The refresh line is used to periodically refresh the contents of the memory by rebuilding the charges on the capacitors. The refresh operation ensures that the charge leakage on the capacitors is replenished, allowing the data to remain stable even with a long period of inactivity.

The FM25C160B-GTR memory has a simple interface consisting of three ports, data in (DI), data out (DO), and a read-write enable (RWEN) line for writing data to the memory. There are also two internal registers, a counter register and a status register, used to read and write data. The counter register is used to address the memory locations and the status register indicates the status of the memory.

Conclusion

The FM25C160B-GTR memory device is a storage element that can be used to store data either permanently or temporarily. It is useful in many applications due to its low power consumption and small size, and is suitable for embedded, consumer electronic, and communication applications. The working principle of the memory is that electrical charges are stored in memory cells, and data is either read from or written to the memory by applying a voltage to the read or write lines.

The specific data is subject to PDF, and the above content is for reference

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