FM25V02A-GTR Allicdata Electronics

FM25V02A-GTR Integrated Circuits (ICs)

Allicdata Part #:

428-3579-2-ND

Manufacturer Part#:

FM25V02A-GTR

Price: $ 3.47
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FRAM 256K SPI 40MHZ 8SOIC
More Detail: FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8)...
DataSheet: FM25V02A-GTR datasheetFM25V02A-GTR Datasheet/PDF
Quantity: 7500
1 +: $ 3.47000
10 +: $ 3.41000
100 +: $ 3.29000
1000 +: $ 3.05000
10000 +: $ 2.57000
Stock 7500Can Ship Immediately
$ 3.47
Specifications
Series: F-RAM™
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 256Kb (32K x 8)
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Description

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Memory has multiple functions, such as data storage and data sharing. The FM25V02A-GTR is one type of memory that carries out those functions. It is widely used in various electronic equipment and is available in 8-pin packages.

The FM25V02A-GTR is a 2Kbit non-volatile FRAM memory based on an SPI interface. The chip has integrated a fast write/read buffer for data transfer. It has an embedded power-fail protection circuit that prevents accidental data loss and maintains data integrity in the event of low power applications. The chip also has a write protect function and an open-drain write protect pin, which can be used to control write cycles and protect data from being written over.

The FM25V02A-GTR offers high speed performance with a maximum data transfer rate of 8MHz, and a fast write/read buffer for up to 40MHz. It has low power consumption, with a typical 5V operating voltage of 1.3mW. The data retention period is up to 200 years and offers excellent temperature stability over a wide temperature range of -40~+125°C. It offers unlimited rewrite cycles and low power consumption, making it suitable for battery-powered applications.

The device has a wide range of application fields, such as consumer electronics, industrial data acquisition, smart meters, portable devices, smart cars, medical devices, etc. It is commonly used to store individual user\'s data, including personal preferences and historical records. The chip is also used in IoT systems, as it offers low-latency data access and data sharing in real-time.

In terms of its operating principle, the FM25V02A-GTR includes a memory controller,a storage block, a write protection circuit, and a data transmission interface. The memory controller works to manage and operate the memory cell. It includes instruction decoding, address selection, data transfer, and erase functions. The write protection circuit is used to control write cycles and protect data from being written over. The data transmission interface enables the external control logic to communicate with the chip.

The FM25V02A-GTR\'s memory cell is composed of non-volatile ferroelectric RAM (FRAM). FRAM is a random-access memory (RAM) that uses different charge behaviors to store data using an electric field. In comparison to conventional volatile RAM memory, FRAM offers a longer data retention period and faster read/write access time. The operating principle is similar to that of standard RAM, with the main difference being that data is stored through the electric field created by a capacitor.

To summarize, the FM25V02A-GTR is a type of memory chip that is widely used in different electronic equipment due to its fast write/read buffer, low power consumption and high temperature stability. It offers a wide range of application fields, including consumer electronics, industrial data acquisition, smart meters, etc. The chip operates using a memory controller, a storage block, a write protection circuit and a data transmission interface. Its operating principle is rooted in the electric field generated by a capacitor using FRAM memory.

The specific data is subject to PDF, and the above content is for reference

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