FMMT720TA

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	1.5A
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	330mV @ 100mA, 1.5A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	300 @ 100mA, 2V
Power - Max:	625mW
Frequency - Transition:	190MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Base Part Number:	FMMT720

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The FMMT720TA is a popular bipolar transistor, designed for use in an array of applications, ranging from signal amplification and switching, to driver or interface circuits. This NPN transistor is fairly robust, featuring a maximum current rating of 250 mA, a collector-emitter breakdown voltage of 60 V, and a high current gain (hFE) of up to 400. In this article, we’ll take a look at the FMMT720TA and its applications, as well as its basic operating principle.Applications and FeaturesThe FMMT720TA is an NPN transistor, which is mostly used in low-frequency low-powered applications, such as signal amplification, signal switching, and driver or interface circuits. This max IC rating of 250 mA and hFE of 400 makes this transistor highly suitable for use in low-current, low-power circuits that require small signal amplification. It comprises three terminals: the collector, base, and emitter. The collector on the transistor is responsible for accepting the input current from the power source, while the base is responsible for controlling the output current. The emitter is the terminal which provides the output current to the circuit it is connected to.The features of FMMT720TA are as follows:* Collector-emitter breakdown voltage – 60 V* Maximum current rating – 250 mA* High current gain (hFE) – up to 400* Collector-emitter saturation voltage – 2 VWorking PrincipleThe working principle of an NPN transistor, such as the FMMT720TA, is based on a process known as minority carrier injection. When the base-emitter junction is forward biased, charge carriers called electrons, are injected into the base region of the transistor. These electrons, due to the lack of electrons in the base region, become minority carriers and are attracted to the collector region of the transistor. As they “flow” from the base to the collector, a current is created, known as the transistor’s collector current. This collector current is responsible for amplifying the input signal, switching it on or off when desired.ConclusionThe FMMT720TA is a popular bipolar NPN transistor, designed for use in an array of low-power applications. This transistor features a collector-emitter breakdown voltage of 60 V, a maximum current rating of 250 mA, and a high current gain of up to 400. Its operating principle is based on minority carrier injection and is used to amplify or switch small electrical signals. This device can be used as an amplifier, signal switch, and/or driver in a variety of circuits.

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