FMMTL717TC

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FMMTL717TC is a type of transistor which belongs to Bipolar Junction Transistor (BJT) Single. It is designed as an amplifier, oscillator or as a switch device such as an audio amplifier, radio or television receiver and telemetry system; or as power switch applications in low level, medium power, and low frequency circuits.

The FMMTL717TC is an NPN and PNP transistor with a maximum collector current of 100mA. It has a forward current gain β which can range from 30 to 250 with a maximum output power rating of 1300mW and a total power dissipation of 1.3W. The DC current gain can range from 30 to 250 and the collector-emitter voltage can range from 30V to 80V. The transistor also has a maximum collector-emitter voltage of 10V and a maximum operating junction temperature of 155°C.

The FMMTL717TC is composed of three layers of semiconductor material; one P-type, one N-type and one N-type. P-type material is represented by an n-type material for this type of transistor. The P-layer is the collector layer, the N-layer is the base layer, and the N-layer is the emitter layer. The three layers from collector to base to emitter, act as a switch, allowing the transistor to amplify current or voltage changes.

The FMMTL717TC application field includes various systems such as TV, radio, telemetry and automotive electronics. It is widely used in communication circuits as well as audio amplifiers, precision switching applications and power management requirements. It can also be used in high frequency control systems, pulse control applications and low current amplifier devices. Furthermore, the FMMTL717TC works as an oscillator and a switch, which enables it to be used in plenty of applications where those features come in handy.

The working principle is based on the principle of p-n junction. This *transistor consists of two p-n junctions, collector and emitter, which conduct inversely of each other. The transistor contains three active regions, the collector, base, and emitter. The base is used to control the current flow from the collector to the emitter. When a current or voltage is applied to the base, it allows electrons from the collector to flow to the emitter. This means a minute amount of current flowing through the base can control the flow of the much larger current from the collector to the emitter, thus amplifying the current. This is the principle on which the FMMTL717TC operates.

In summary, the FMMTL717TC is a type of Bipolar Junction Transistor (BJT) Single which is composed of three layers of semiconductor material and consists of two p-n junctions. It is widely used in many devices such as television and radio receivers, telemetry systems, audio amplifiers, precision switching applications, and high frequency control systems. Its working principle is based on the principle of p-n junction, where the base is used to control the current flow from the collector to the emitter.

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