FMMTA06TC Allicdata Electronics
Allicdata Part #:

FMMTA06TC-ND

Manufacturer Part#:

FMMTA06TC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 80V 0.5A SOT23-3
More Detail: Bipolar (BJT) Transistor NPN 80V 500mA 100MHz 330m...
DataSheet: FMMTA06TC datasheetFMMTA06TC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Power - Max: 330mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: FMMTA06
Description

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The FMMTA06TC is a high-powered bipolar junction transistor (BJT) made up of a single layer of semiconductor material. It is a family of general purpose transistors often used for amplifying and switching electronic signals. This type of transistor is a type of NPN bipolar junction transistor (BJT) and has a nominal current gain of 80. It is available in a standard TO-92, three-pin plastic package and is ideally suited for a variety of applications.

The FMMTA06TC is a versatile device which can be used in a wide range of applications including high frequency amplifiers, input stages of audio amplifiers and computer peripherals, switching circuits, deflection circuits and power supply circuits.

The NPN bipolar junction transistor (BJT) consists of three separate layers of semiconductor material; the base, collector and emitter. Each layer has different electrical characteristics and is responsible for different tasks in the overall operation of the transistor. The base is the control element, the collector is the current-carrying element and the emitter is a contact which gives off the current.

The FMMTA06TC has a wide range of operating characteristics which make it suitable for a wide range of applications. It has a minimum collector current of 0.1A, a saturation voltage of 0.2V, a maximum collector-emitter voltage of 30V and an operating frequency of up to 8MHz. In addition, it has a low noise figure of -30dB and excellent thermal resistance.

In operation, the control element (base) and the emitter are linked together, and the collector is linked to the supply voltage. When a signal or current is applied to the base, electrons will flow from the emitter to the collector. This flow of current is known as forward biasing. The forward biased collector current is then amplified, creating a larger current from the transistor\'s collector to its emitter. This amplified voltage is known as the collector-emitter voltage, and is controlled by the voltage applied to the base.

The FMMTA06TC is an ideal selection for general purpose applications. It has a low noise figure and excellent thermal resistance, making it suitable for high frequency applications such as radio frequency (RF) circuits. In addition, it is also suitable for power switching applications due to its high current rating and low saturation voltage. The FMMTA06TC is a versatile and reliable transistor, making it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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