FMMT38CTC Allicdata Electronics
Allicdata Part #:

FMMT38CTC-ND

Manufacturer Part#:

FMMT38CTC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN DARL 60V 0.3A SOT23-3
More Detail: Bipolar (BJT) Transistor NPN - Darlington 60V 300m...
DataSheet: FMMT38CTC datasheetFMMT38CTC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.25V @ 8mA, 800mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 100mA, 5V
Power - Max: 330mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: FMMT38C
Description

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The FMMT38CTC is a medium-power, hermetically sealed, single NPN bipolar junction transistor (BJT). This device is primarily used in amplifier applications. It has a lower power rating than most other types of bipolar transistors, making it a suitable choice for applications that require a lower power output. This device is a cost-effective, compact, and reliable solution for medium-power amplifiers.

The FMMT38CTC is available in a TO-39 package. It features a flat collector base and can be used either as an TO-39 amplifier or in a TO-39 voltage-controlled oscillator (VCO) circuit. The device has an operating junction temperature range of -55°C to +150°C, making it suitable for applications in a wide range of temperatures. Additionally, its storage temperature range of -65°C to +150°C ensures its reliability in high-temperature environments.

The FMMT38CTC has a low inter-base capacitance and a high current gain of up to 200, making it suitable for use in audio-frequency amplifiers. It offers a low noise figure of up to 3.2dB, resulting in a lower Total Harmonic Distortion (THD). The device also has a high slip frequency, which allows it to be used in VCO circuits with a wide range of frequencies. Additionally, it is equipped with a reverse-biased base-emitter junction that prevents the saturation of the amplifier or VCO circuit when an excessive bias current is applied.

The working principle of the FMMT38CTC is based on the transistor effect. Transistors consist of three terminals, the emitter, base, and collector. The emitter-base junction is forward biased when the base-emitter voltage is larger than the base-collector voltage. This allows holes and electrons to move from the emitter to the collector, creating a current flow from the collector to the emitter. The current gain of the transistor is determined by the ratio of the collector to emitter currents. When the base current is increased, the collector current increases exponentially, allowing the device to amplify signals.

The FMMT38CTC is a versatile device that can be used in a wide range of amplifier applications. Its low power rating and high current gain make it an ideal choice for low-power amplifier circuits. It has a high slip frequency and a high voltage gain, making it suitable for use in VCO circuits. Additionally, its reverse-biased base-emitter junction prevents the saturation of the amplifier or VCO circuit, making it a reliable solution for audio-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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