FMMTA64TA

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The FMMTA64TA is a single bipolar junction transistor (BJT) device. It is mainly used in high-speed switching operations and amplifier applications. The device can be used in numerous power management related applications. It has a 10A collector current rating, a maximum power dissipation of 1.5W and a maximum junction temperature of 150°C. The FMMTA64TA has a base-emitter voltage rating of 5V, a maximum collector-emitter voltage rating of 400V and a maximum forward current rating of 60A.

The FMMTA64TA comes with two types of packages, including a DPAK (Discrete Packaged Thin-Shank) and an SOT-223 (Double Row Surface Mounted Thin-Shank) package. The device is designed to be thermally efficient, having a thermal resistance of 4.5°C/W when using the SOT-223 package and 8.5°C/W when using the DPAK package. In addition, the FMMTA64TA is designed to provide superior durability and long-term stability, with a storage temperature range of -40°C to 150°C and a junction temperature range of -40°C to 175°C.

The FMMTA64TA has an emitter-base breakdown voltage of 7V and a collector-emitter breakdown voltage of 400V. It also features a high current gain, with a minimum hFE of 300 and a maximum hFE of 1000, making it ideal for amplifier and switch applications. The FMMTA64TA also has a high forward current rating of 60A and a maximum reverse current rating of 5A.

The FMMTA64TA is typically used in power management applications, such as switching and amplification, as well as in automotive applications. For switching applications, the device provides fast switching speeds with a rise time of 5ns, a fall time of 5ns, and a turn-on delay of 5ns. For amplification applications, the device provides a high current gain with a minimum hFE of 300 and a maximum hFE of 1000. The FMMTA64TA is also suitable for use in automotive applications where it can provide fast switching speeds and accurate current feedback control.

The working principle of the FMMTA64TA is based on the BJT mode of operation. The device consists of three terminals, a collector, an emitter, and a base and a small base current is applied to the base terminal for the device to turn on. The majority of the current flow is diverted to the collector terminal and is amplified by the transistor action. The collector current can be controlled by varying the base current. The current gain of the device is given by the ratio of collector current to base current. The device can be used both in common emitter and common base configuration depending on the required application.

The FMMTA64TA is a single bipolar junction transistor (BJT) with an emitter-base breakdown voltage of 7V, a collector-emitter breakdown voltage of 400V, and a high current gain with a minimum hFE of 300 and a maximum hFE of 1000. It is suitable for a wide variety of applications, including high-speed switching operations, amplifier applications, and automotive applications. The device is also highly durable, with a storage temperature range of -40°C to 150°C and a junction temperature range of -40°C to 175°C.

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