Allicdata Part #: | FMMT591QTADITR-ND |
Manufacturer Part#: |
FMMT591QTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 60V 1A SOT23-3 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 1A 150MHz 500mW S... |
DataSheet: | FMMT591QTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 350mV @ 100mA, 1A |
Current - Collector Cutoff (Max): | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 500mA, 5V |
Power - Max: | 500mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
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The FMMT591QTA is a PNP silicon switching transistor. It belongs to the bipolar (BJT) single type and features a low capacitance and low collector-emitter saturation voltage. This transistor is designed for switching applications and is used in audio amplifiers and equipment, as well as other applications where low noise performance is needed.
The FMMT591QTA has a low input capacitance value, which allows it to switch quickly and accurately with less disturbance due to electrical noise. This is achieved by reducing the amount of charge required for the base current to be switched. Additionally, the low collector-emitter saturation voltage ensures low power dissipation and helps keep the transistor stable at higher switching frequencies.
The FMMT591QTA has a range of applicable fields, such as audio amplifiers and equipment, Electronic Power Control (EPC) devices, switch mode power supplies (SMPS), and various other electronic devices. In addition, this transistor is reliable enough for use in automotive, aerospace andmilitary applications.
The working principle of this transistor is based on the phenomenon of electron flow. In a PNP type, electrons flow from the emitter to the base and then to the collector, causing the collector-base junction to become forward bias. This causes current to flow from the collector to the emitter, known as collector current, and the voltage present between the collector and the emitter is known as collector voltage or collector-emitter voltage.
When collector current begins to flow, the collector-emitter voltage begins to drop. Once it drops below the base-emitter voltage, the transistor enters into cut-off mode, blocking current from flowing in the collector-emitter circuit. This is the switching action of the transistor. The collector voltage also plays an important role in determining circuit power dissipation, which is why it is important to keep collector voltage low while switching ON/OFF.
The FMMT591QTA has a wide variety of application fields and working principles, making it useful and reliable in a variety of applications. Its low capacitance and low collector-emitter saturation voltage make it an excellent choice for switching circuits, while its low power dissipation makes it ideal for those applications that require low noise performance. Its reliability also makes it suitable for automotive, aerospace, and military applications.
The specific data is subject to PDF, and the above content is for reference
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