FMMT593QTA

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The FMMT593QTA is a PNP transistor designed for general purpose amplifier and switching applications. It features a low collector-to-emitter saturation voltage and good hFE linearity. It is ESD resistant and is offered with a moisture resistant and AEC-Q101 qualified package.

Features

• DC Current Gain: 10 to 80
• Collector-Emitter Saturation Voltage: 0.3 V (Max)
• Power Dissipation Rating: 300 mW
• Repetitive Avalanche Energy: 30 mJ (Max)

Applications

• General Purpose Amplifier
• Switching Applications
• Motor Drivers
• Battery-Powered Devices

Working Principle

Bipolar transistors such as the FMMT593QTA are current controlled devices. The transistor consists of two PN junctions formed by the two P-doped and two N-doped regions. When a small current is applied between the base and emitter of the transistor, it causes a large current to flow between the collector and emitter. This is called the collector current.

In a single stage transistor such as the FMMT593QTA, the base current is the source of the collector current. When the base current increases, the collector current also increases. This is known as the current gain or hFE. The amount of current gain will vary from one transistor to another, and is usually specified on the data sheet.

The FMMT593QTA also has a low collector-to-emitter saturation voltage, meaning that the transistor can handle relatively large currents without the collector voltage dropping drastically. This feature is useful for applications such as motor drivers or battery-powered devices, where the current load on the transistor can be high.

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