FQA8N100C

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3PN
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	225W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3220pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	70nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	1.45 Ohm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drain to Source Voltage (Vdss):	1000V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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FQA8N100C Application Field and Working Principle

Introduction

FQA8N100C is a high-voltage N-Channel Field-Effect Transistor (FET) from Fairchild Semiconductor. It is one of the most commonly used N-channel MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) with a breakdown voltage rating of 100V and a maximum drain-source voltage of 55V. It is also known as the 2SK419 due to its JEDEC part number. It is an ideal device for switching and amplifying electronic signals and is widely used in various application fields such as motor control, robotics, and audio amplifiers.

Application Fields

The FQA8N100C is a high-voltage transistor used in a variety of applications that require switching or amplifying signals at high voltages. These application fields include motor control, robotics, audio amplifiers, and power supplies.In motor control applications, the FQA8N100C is used in conjunction with a driver chip such as the IR2125 or IR2126 to create a Pulse-Width Modulated (PWM) circuit for driving the motor. This kind of circuit is used to control the speed of a motor, allowing the user to adjust the speed in a much more precise way than a simple conventional circuit.In robotics, the FQA8N100C is a valuable component for powering robotic components such as servo motors, as it can handle higher voltages than standard transistors. Additionally, its low gate voltage threshold makes it very power-efficient, allowing devices to run for longer periods of time on the same amount of power.The FQA8N100C is also commonly used in audio amplifiers to switch signals between two or more signal sources and amplify them. Its high voltage rating makes it perfect for amplifying signals at high voltage levels, while its low gate voltage threshold makes it power-efficient and allows the signal to remain clear.Finally, the FQA8N100C is often used in power supplies to provide switching and/or voltage regulation. It is often used in conjunction with other components such as resistors and capacitors to develop an efficient power supply circuit.

Working Principle

The FQA8N100C is a type of Field-Effect Transistor (FET), which means that it uses a voltage applied to the gate terminal to control the current flow between the two source and drain terminals. It is an N-Channel FET, meaning that the gate is connected to the source, with the drain connected to the source.When no voltage is applied to the gate terminal, the FQA8N100C is fully off. This is because there is no current flowing through the transistor, and the voltage between the drain and source terminals is equal to the supply voltage.When a voltage is applied to the gate terminal, it creates an electric field, which attracts electrons from the source and “closes” the FET. As the voltage on the gate rises, more and more electrons are attracted, thus allowing more current to flow from the drain to the source.Finally, when the voltage of the gate reaches the Pinch-Off voltage, the FET is fully “closed” and the current flow is at its maximum value (also known as the saturation current). At this point, the voltage across the drain and source terminals is equal to the gate voltage minus the voltage drop of the FET.

Conclusion

The FQA8N100C is a high-voltage N-Channel FET used in many applications that require switching or amplifying signals at high voltage levels. It is commonly used in motor control, robotics, audio amplifiers, and power supplies. Its low gate voltage threshold makes it power-efficient and its high voltage rating makes it perfect for amplifying signals at high voltage levels. Its working principle is based on the principle of creating an electric field by applying a voltage to the gate terminal, which attracts electrons and allows current to flow from the drain to the source.

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