| Allicdata Part #: | FQA8N80C_F109-ND |
| Manufacturer Part#: |
FQA8N80C_F109 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 800V 8.4A TO-3P |
| More Detail: | N-Channel 800V 8.4A (Tc) 220W (Tc) Through Hole TO... |
| DataSheet: |  FQA8N80C_F109 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | QFET® |
| Packaging: | Tube |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 800V |
| Current - Continuous Drain (Id) @ 25°C: | 8.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 1.55 Ohm @ 4.2A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2050pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 220W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-3PN |
| Package / Case: | TO-3P-3, SC-65-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FQA8N80C_F109 is part of Fairchild Semiconductor’s Extended SmartFET lineup and is a highly efficient and reliable silicon-based, P-channel MOSFET with an integrated control circuit.
The device is commonly used in motor control, load switch and power and energy management applications with voltage ratings up to 800 Volts and currents reaching up to 8 Amps. It enables safety and reliable operation in high-end applications such as photovoltaic and solar inverter systems by providing current limiting, overtemperature protection, and mismatch protection.
The FQA8N80C_F109 is a high performance N-channel, depletion-mode MOSFET with an integrated control circuit. It is designed to incorporate both current and temperature sensing capabilities to reduce the risk of failure even in extreme conditions. The device is specifically designed to be used in systems that require both high current capacity and high voltage ratings, while still providing optimal safety and reliability.
The FQA8N80C_F109 utilizes a unique, self-cooled structure design to reduce both costs and power losses during operation. The device can also operate under a reverse-blocking mode for higher efficiency, lower leakage current, and less noise. The integrated control circuit is designed to detect if current or temperature levels exceed safety thresholds, and it will then shut off the device to prevent damage.
The features and benefits of the FQA8N80C_F109 are best suited to a variety of applications, such as switch mode power supplies, motor control, load switches, and power and energy management. The device offers a high current carrying capability and high voltage performance, enabling it to be used in systems that require reliable operation in tough environmental conditions. The integrated control circuit also helps to protect the device in extreme cases, reducing the risk of failure. The FQA8N80C_F109 is an ideal choice for a range of demanding applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| FQA8N80C_F109 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 800V 8.4A TO-... |
| FQA8N80C | ON Semicondu... | -- | 1000 | MOSFET N-CH 800V 8.4A TO-... |
| FQA8N90C | ON Semicondu... | -- | 1000 | MOSFET N-CH 900V 8A TO-3P... |
| FQA85N06 | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 100A TO-3... |
| FQA8N90C-F109 | ON Semicondu... | 2.82 $ | 724 | MOSFET N-CH 900V 8A TO-3P... |
| FQA8N100C | ON Semicondu... | -- | 413 | MOSFET N-CH 1000V 8A TO-3... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...