| Allicdata Part #: | FQA8N90C-ND |
| Manufacturer Part#: |
FQA8N90C |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 900V 8A TO-3P |
| More Detail: | N-Channel 900V 8A (Tc) 240W (Tc) Through Hole TO-3... |
| DataSheet: |  FQA8N90C Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 240W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2080pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 1.9 Ohm @ 4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
| Drain to Source Voltage (Vdss): | 900V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The FQA8N90C is a state-of-the-art transistor that is used in a variety of applications. It is a field-effect transistor (FET) that is designed to transfer signals and control current between two components. It is a single-gate device and can be used to amplify or switch signals.
The basic FQA8N90C consists of a source, gate, and drain. The source and the drain are typically connected to an electrical source and the gate is connected to the signal line. When the gate is activated, the source and drain form an electric field that controls the current between the two components. This technique is used for switching and amplifying signals. In addition, when a voltage is applied to the gate, electrons can be transferred from one layer of the transistor to the other, which is how the transistor amplifies signals.
The FQA8N90C has a variety of applications where a high-speed switch or amplifier is needed. It is used in analog circuits, digital circuits, and radio-frequency (RF) applications. It can be used in RF systems such as cellular phones and military communication systems. It can also be used in power amplifiers, video amplifiers, and motor control systems. Additionally, it is useful in data conversion and filtering applications, as well as audio systems.
The FQA8N90C has an improved HFE and gate charge compared to other commonly used FETs. This makes it ideal for switching and amplifying signals quickly and accurately. Additionally, the low on-resistance of the FQA8N90C makes it suitable for high power applications. This feature makes it a viable option for applications that require high power, such as motor control.
The FQA8N90C can be used to create complex signal paths in a variety of applications. It is often used in designs which require signal switching or signal amplification, or both. It is an ideal choice for high-speed applications, as it has a low gate charge and an improved HFE. Additionally, its low on-resistance makes it well-suited for high power applications. With its wide range of application options and its superior performance characteristics, the FQA8N90C is a reliable, high-tech option for almost any application.
The specific data is subject to PDF, and the above content is for reference
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