FQI4N20TU Allicdata Electronics
Allicdata Part #:

FQI4N20TU-ND

Manufacturer Part#:

FQI4N20TU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 200V 3.6A I2PAK
More Detail: N-Channel 200V 3.6A (Tc) 3.13W (Ta), 45W (Tc) Thro...
DataSheet: FQI4N20TU datasheetFQI4N20TU Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.13W (Ta), 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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FQI4N20TU is a type of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is a single-transistor type of symmetrical MOSFET with a field-oxide insulated structure and parallel channel. Due to its low on-resistance and high switching speed, FQI4N20TU has wide applications in various fields of electronics, and is one of the most popular FETs used in the industry today.

To understand how FQI4N20TU works, first, it\'s important to understand how MOSFETs in general work. The MOSFET is a four-terminal device, composed of two terminals, the source and drain, and two gates, the gate and substrate. The four components work in concert to control the flow of electricity from the source to the drain.

The principle of operation for an FQI4N20TU is similar to that of other MOSFET devices. At the heart of the FQI4N20TU is an integrated circuit chip that consists of a large number of transistors and other circuit elements. To operate, a voltage is applied to the gate of the FQI4N20TU, which generates a field between the gate and the substrate. As this field increases, the susceptibility of the channel to electric current increases, as well as the conductibility of the FQI4N20TU. As a result, the current between the source and the drain is increased.

In addition to controlling current, FQI4N20TU can also be used to regulate the voltage between the source and the drain by adjusting the gate voltage. This is known as a voltage-controlled device, and is often used in power management applications. By controlling the voltage between the source and the drain, more efficient power management can be achieved.

FQI4N20TU are often used in high-speed applications, where the device must be able to switch quickly. Such applications include digital signal processing, motor control and power supplies. The fast switching ability of FQI4N20TU makes it an ideal device for these types of applications, as well as for use in test and measurement equipment, electromagnetic interference suppression and in high-frequency power conversion.

FQI4N20TU are also used in low-temperature applications, where low power devices with low power surface area are needed. Examples of such applications include field programmable gate array (FPGA) and semiconductor memory systems. In these applications, the FQI4N20TU is used to provide low-voltage switching at high speed.

The FQI4N20TU is one of the most widely used FETs in the industry. It is incredibly versatile, capable of performing many different functions Depending on the application, the FQI4N20TU can be used for high speed switching, efficient power management, low-temperature operations, and more. As a result, FQI4N20TU has a wide range of applications, and is an essential component of many different electronics products.

The specific data is subject to PDF, and the above content is for reference

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