
Allicdata Part #: | FQI4N20TU-ND |
Manufacturer Part#: |
FQI4N20TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 3.6A I2PAK |
More Detail: | N-Channel 200V 3.6A (Tc) 3.13W (Ta), 45W (Tc) Thro... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 220pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 6.5nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 1.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FQI4N20TU is a type of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is a single-transistor type of symmetrical MOSFET with a field-oxide insulated structure and parallel channel. Due to its low on-resistance and high switching speed, FQI4N20TU has wide applications in various fields of electronics, and is one of the most popular FETs used in the industry today.
To understand how FQI4N20TU works, first, it\'s important to understand how MOSFETs in general work. The MOSFET is a four-terminal device, composed of two terminals, the source and drain, and two gates, the gate and substrate. The four components work in concert to control the flow of electricity from the source to the drain.
The principle of operation for an FQI4N20TU is similar to that of other MOSFET devices. At the heart of the FQI4N20TU is an integrated circuit chip that consists of a large number of transistors and other circuit elements. To operate, a voltage is applied to the gate of the FQI4N20TU, which generates a field between the gate and the substrate. As this field increases, the susceptibility of the channel to electric current increases, as well as the conductibility of the FQI4N20TU. As a result, the current between the source and the drain is increased.
In addition to controlling current, FQI4N20TU can also be used to regulate the voltage between the source and the drain by adjusting the gate voltage. This is known as a voltage-controlled device, and is often used in power management applications. By controlling the voltage between the source and the drain, more efficient power management can be achieved.
FQI4N20TU are often used in high-speed applications, where the device must be able to switch quickly. Such applications include digital signal processing, motor control and power supplies. The fast switching ability of FQI4N20TU makes it an ideal device for these types of applications, as well as for use in test and measurement equipment, electromagnetic interference suppression and in high-frequency power conversion.
FQI4N20TU are also used in low-temperature applications, where low power devices with low power surface area are needed. Examples of such applications include field programmable gate array (FPGA) and semiconductor memory systems. In these applications, the FQI4N20TU is used to provide low-voltage switching at high speed.
The FQI4N20TU is one of the most widely used FETs in the industry. It is incredibly versatile, capable of performing many different functions Depending on the application, the FQI4N20TU can be used for high speed switching, efficient power management, low-temperature operations, and more. As a result, FQI4N20TU has a wide range of applications, and is an essential component of many different electronics products.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FQI4N20LTU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 3.8A I2P... |
FQI4N80TU | ON Semicondu... | -- | 653 | MOSFET N-CH 800V 3.9A I2P... |
FQI4N20TU | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 3.6A I2P... |
FQI4N25TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 250V 3.6A I2P... |
FQI4N90TU | ON Semicondu... | -- | 999 | MOSFET N-CH 900V 4.2A I2P... |
FQI47P06TU | ON Semicondu... | -- | 1000 | MOSFET P-CH 60V 47A I2PAK... |
FQI4P40TU | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 400V 3.5A I2P... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
