FQI4N80TU Allicdata Electronics
Allicdata Part #:

FQI4N80TU-ND

Manufacturer Part#:

FQI4N80TU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 800V 3.9A I2PAK
More Detail: N-Channel 800V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Thr...
DataSheet: FQI4N80TU datasheetFQI4N80TU Datasheet/PDF
Quantity: 653
Stock 653Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1.95A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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FQI4N80TU Application Field and Working Principle

Transistors - FETs, MOSFETs - Single

FQI4N80TU are high voltage MOSFETs designed for high frequency applications such as in DC/DC converters, motor drives and many more. They offer superior performance not only in terms of power handling capability but also thermal management by enabling a superior cooling of the component.

FQI4N80TU are basically gate-controlled switches that use the voltage applied to its gate to control the current through the drain and source. It is a three-terminal device with the source, drain, and gate terminals. By controlling the gate voltage, the drain to source current can be controlled.

The most important feature of the FQI4N80TU is its ability to handle the high voltage ranges up to 550 V in a low-package. This results in a significantly reduced power loss by allowing a more localized heating environment.

One of the unique characteristics of this MOSFET is that it has a low threshold voltage of 4 volts and a low gate charge. This is necessary because of the high switching speeds required in modern digital circuits. This low threshold voltage also allows it to operate at higher voltage levels than regular MOSFETs, enabling the FQI4N80TU to operate efficiently in high frequency applications.

Another great feature of this MOSFET is its low on-resistance, enabled by the device’s design. This reduces the amount of power consumed in switching applications. This MOSFET also has a low input capacitance, reducing the delay in signal transmission.

The FQI4N80TU is designed to have a very high frequency and a high speed turn-on/turn-off capability, making it suitable for high frequency applications. This product also features a soft-switching capability, which ensures a low power dissipation at high switching speeds.

The FQI4N80TU is also known for its high thermal performance, as it includes a low thermal resistance package. This package helps dissipate heat effectively, which in turn increases the operational life of the device. This MOSFET also has a low noise and low static power rating.

The FQI4N80TU is a highly efficient, low-cost MOSFET suitable for a wide range of high frequency applications. It offers excellent performance and reliability, while consuming low power.

The specific data is subject to PDF, and the above content is for reference

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