FQI4P40TU Allicdata Electronics
Allicdata Part #:

FQI4P40TU-ND

Manufacturer Part#:

FQI4P40TU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 400V 3.5A I2PAK
More Detail: P-Channel 400V 3.5A (Tc) 3.13W (Ta), 85W (Tc) Thro...
DataSheet: FQI4P40TU datasheetFQI4P40TU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.13W (Ta), 85W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 3.1 Ohm @ 1.75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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FQI4P40TU is a type of Field-Effect Transistor used in various applications. It is a MOSFET, which stands for Metal Oxide Semiconductor Field-effect Transistor. It is a single transistor that can be used for a range of tasks, from simple switching to amplification.

The main idea behind a FET is that the electrical properties of its channel can be modified by a varying electric field, which is applied by controlling the voltage at a control gate.

The FQI4P40TU is a four-pin transistor specifically designed for high-power switching applications, such as motor control and power management. It features very low on-resistance and fast switching times, making it ideal for applications requiring low switching loss, high circuit efficiency and minimal noise generation. As a result, it is suitable for applications such as motor control, regulated power supply and switching power converters.

The transistor is also characterized by its ability to support high-voltage operation and large signal swings. The FQI4P40TU can operate at up to 100V and handle a maximum of 10V peak signals. It also features high-temperature performance, capable of operating at up to 150℃ without any degradation in performance.

The FQI4P40TU is made from high purity single crystalline silicon and features a fourth terminal, called the Gate Electrode. The Gate Electrode is connected to a control voltage and acts as the main gate in a MOSFET. The other three terminals are the Drain, which is connected to an electrical load, the Source, which is connected to a voltage source, and the Body, which is connected to the Source in order to provide a reference voltage.

When a control voltage is applied between the Gate and the Body terminal, an electric field is created across the channel. This field gives rise to an adjustable channel resistance between the Source and the Drain that can be used to modulate current flow. This is the primary working principle of a MOSFET.

The FQI4P40TU is most commonly used for applications such as power switches, voltage-controlled current sources, DC-DC converters, and other high-voltage switching applications. Its low on-resistance and fast switching speeds make it a popular choice for a wide range of tasks.

In summary, the FQI4P40TU is an ideal choice for applications requiring low on-resistance, fast switching times and high reliability. Its wide range of uses make it a popular device for a variety of circuit applications. It is characterized by its four pins, the Gate, Source, Drain and Body, which together enable it to be used as a power switch or voltage-controlled current source.

The specific data is subject to PDF, and the above content is for reference

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