Allicdata Part #: | FQI4P40TU-ND |
Manufacturer Part#: |
FQI4P40TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 400V 3.5A I2PAK |
More Detail: | P-Channel 400V 3.5A (Tc) 3.13W (Ta), 85W (Tc) Thro... |
DataSheet: | FQI4P40TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 85W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 3.1 Ohm @ 1.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQI4P40TU is a type of Field-Effect Transistor used in various applications. It is a MOSFET, which stands for Metal Oxide Semiconductor Field-effect Transistor. It is a single transistor that can be used for a range of tasks, from simple switching to amplification.
The main idea behind a FET is that the electrical properties of its channel can be modified by a varying electric field, which is applied by controlling the voltage at a control gate.
The FQI4P40TU is a four-pin transistor specifically designed for high-power switching applications, such as motor control and power management. It features very low on-resistance and fast switching times, making it ideal for applications requiring low switching loss, high circuit efficiency and minimal noise generation. As a result, it is suitable for applications such as motor control, regulated power supply and switching power converters.
The transistor is also characterized by its ability to support high-voltage operation and large signal swings. The FQI4P40TU can operate at up to 100V and handle a maximum of 10V peak signals. It also features high-temperature performance, capable of operating at up to 150℃ without any degradation in performance.
The FQI4P40TU is made from high purity single crystalline silicon and features a fourth terminal, called the Gate Electrode. The Gate Electrode is connected to a control voltage and acts as the main gate in a MOSFET. The other three terminals are the Drain, which is connected to an electrical load, the Source, which is connected to a voltage source, and the Body, which is connected to the Source in order to provide a reference voltage.
When a control voltage is applied between the Gate and the Body terminal, an electric field is created across the channel. This field gives rise to an adjustable channel resistance between the Source and the Drain that can be used to modulate current flow. This is the primary working principle of a MOSFET.
The FQI4P40TU is most commonly used for applications such as power switches, voltage-controlled current sources, DC-DC converters, and other high-voltage switching applications. Its low on-resistance and fast switching speeds make it a popular choice for a wide range of tasks.
In summary, the FQI4P40TU is an ideal choice for applications requiring low on-resistance, fast switching times and high reliability. Its wide range of uses make it a popular device for a variety of circuit applications. It is characterized by its four pins, the Gate, Source, Drain and Body, which together enable it to be used as a power switch or voltage-controlled current source.
The specific data is subject to PDF, and the above content is for reference
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