FQI9N08TU Allicdata Electronics
Allicdata Part #:

FQI9N08TU-ND

Manufacturer Part#:

FQI9N08TU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 80V 9.3A I2PAK
More Detail: N-Channel 80V 9.3A (Tc) 3.75W (Ta), 40W (Tc) Throu...
DataSheet: FQI9N08TU datasheetFQI9N08TU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 210 mOhm @ 4.65A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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A FQI9N08TU application field and working principle have been pursued by the electric engineering community for years. This type of technology has been developed to help drive the cost and complexity of the latest electronic devices down. The FQI9N08TU is a type of field-effect transistor (FET) which can be used in a variety of applications. It is widely used in automotive, industrial and consumer electronics.

FQI9N08TU is a single FET transistor that consists of four terminals - the drain (D), source (S), gate (G) and substrate (B). As a single device, the FQI9N08TU is able to switch a large amount of current in a relatively small footprint. Its typically fast switching characteristics and low power dissipation make it a great choice for applications such as power supply regulators, motor control, and digital signal processing.

The basic principle of operation for FQI9N08TU is known as transconductance. This type of field-effect transistor uses an electric field to control the current flowing through it. The electric field is established by placing a voltage on the gate terminal while a current flows from the drain to the source. This creates a difference in voltage between the two sides of the semiconductor, allowing it to switch on and off very quickly.

The major advantages of FQI9N08TUs over other analogue and digital FETs include their low voltage and low current needs, low power dissipation, fast switching capability and relatively linear transfer characteristics. They are also relatively cheap, making them an attractive option for cost-sensitive applications.

FQI9N08TUs can be used in a wide variety of applications, from power supply regulation to motor control to digital signal processing. In power supply regulation applications, the FQI9N08TU is used to sense the output voltage and then adjust the input voltage accordingly, making sure to keep the output voltage within a specified range. In motor control applications, these devices are used to allow the motor to operate with minimal power dissipation, while still providing excellent motor performance. Finally, in digital signal processing applications, the FQI9N08TU can be used to switch between different logic states quickly and accurately.

FQI9N08TU is robust, reliable and easy to use, which makes it a great choice for many applications. Its ability to switch at high speeds and low power dissipation makes it ideal for digital signal processing and automotive applications. Furthermore, its low voltage and low current needs add up to low manufacturing costs. All of these benefits make FQI9N08TU an attractive choice for most applications.

The specific data is subject to PDF, and the above content is for reference

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