FQI9N25CTU

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK (TO-262)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.13W (Ta), 74W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	710pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	430 mOhm @ 4.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8.8A (Tc)
Drain to Source Voltage (Vdss):	250V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

This article will discuss the applications field and working principles of FQI9N25CTU transistors (Field-Effect Transistors, or FETs). In particular, this article will focus on the type of FET known as a single MOSFET (metal–oxide–semiconductor field-effect transistor). A MOSFET operates through the creation of a voltage-controlled electrical resistance across a region of a semiconductor material.

History

The MOSFET was invented by Egyptian-born American engineer Mohamed Atalla in 1959. Atalla proposed a new concept of field effect transistors (FETs) which he called surface-channel devices.Atalla\'s advances in FET technology led to the development of modern MOSFETs which are commonly used today. These are more efficient and cheaper than the traditional transistor. In the late 1970s and early 1980s, MOSFETs began to be used in analog and digital circuits. By the mid-1990s, MOSFETs had become so commonplace that their use was taken for granted.

Working Principle

MOSFET transistors work by using the flow of current through the gate of the transistor to control the flow of current between the drain and the source. In a MOSFET, the gate is separated from the channel by an insulating layer of oxide, which is the material from which the transistor gets its name. This layer is what allows the voltage from the gate to control the current through the channel.The gate of the MOSFET is connected to a voltage-controlled resistor. When the voltage is below a certain threshold, the MOSFET is in its cutoff state, meaning there is no current flow through the channel. When the gate voltage is increased above this threshold, the MOSFET undergoes a transition to its linear region, where current begins to flow through the channel. This voltage-controlled resistor is what allows the MOSFET to be used as a switch, amplifier, or regulator.

Applications

MOSFETs are used in a variety of applications. They are commonly used as electrical switches, amplifiers, and differential amplifiers. They are also extensively used in computers and other digital devices as logic gates, flip-flops, and memory cells.The small size and low power consumption of MOSFETs make them ideal for use in applications such as automobile electronics, portable device applications, and consumer electronics.MOSFETs are also widely used in power electronic converters, as they are capable of controlling high power with high efficiency. Their high input impedance and low output impedance also make them ideal for use in high-voltage switching circuits.

Conclusion

In conclusion, FQI9N25CTU transistors, which are a type of single MOSFET (metal–oxide–semiconductor field-effect transistor), are widely used for their efficiency and flexibility. These transistors can be used as switches, amplifiers, differential amplifiers, logic gates, flip-flops, memory cells, and power electronic converters. Their small size and low power consumption make them ideal for use in a variety of applications, from automobile electronics to consumer electronics.

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