Allicdata Part #: | FQI9N50CTU-ND |
Manufacturer Part#: |
FQI9N50CTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 9A I2PAK |
More Detail: | N-Channel 500V 9A (Tc) 135W (Tc) Through Hole I2PA... |
DataSheet: | FQI9N50CTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 135W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1030pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQI9N50CTU is a type of Field-Effect Transistor (FET), and more specifically a Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). It is used in many devices and especially in digital logic applications.
This type of MOSFET is a single-gate transistor and is used to change the resistance between two points of a circuit in order to control the current flow. As such, FQI9N50CTUs are often used as switches in digital logic devices. This is because they operate by creating an electric field which switches the transistor\'s resistance between an "on" and "off" state, allowing digital logic devices to switch quickly between states.
FQI9N50CTUs are used in a wide variety of electronics and electrical engineering applications. They are commonly found in consumer products such as computers, tablets and mobile phones, as well as more industrial applications such as automotive and industrial control systems. FQI9N50CTUs are also used in power converters and amplifiers, as well as in home automation systems and other sensing and monitoring devices. In addition to their use as switches, FQI9N50CTUs can also be used as amplifiers, oscillators and analog-to-digital converters.
The working principle of FQI9N50CTU is based on the electric field principle. This type of device works by creating an electric field in an area of semiconductor material. This electric field changes the electrical resistance of the material, allowing the device to act as a switch. An applied voltage is used to switch the device between an "on" and "off" state, and this is used to control the current flow in digital applications.
The features that make FQI9N50CTU attractive for use in digital logic devices include its low gate capacitance and its low source-drain capacitance. The low gate capacitance helps keep the signal clean and fast, while the low source-drain capacitance helps avoid signal distortion. FQI9N50CTU also has a low "on" resistance, which helps reduce losses in power systems and in electric motor designs.
The FQI9N50CTU is a versatile and useful device that can be found in a wide variety of applications. Its advantageous characteristics, such as low gate capacitance, low source-drain capacitance and low "on" resistance make it particularly useful in digital logic and power systems. By controlling current flow through an electric field, FQI9N50CTU allows digital devices to switch quickly between states and helps reduce power losses in power systems.
The specific data is subject to PDF, and the above content is for reference
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