Allicdata Part #: | FQT13N06LTFTR-ND |
Manufacturer Part#: |
FQT13N06LTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 2.8A SOT-223 |
More Detail: | N-Channel 60V 2.8A (Tc) 2.1W (Tc) Surface Mount SO... |
DataSheet: | FQT13N06LTF Datasheet/PDF |
Quantity: | 4000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6.4nC @ 5V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 1.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.8A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FQT13N06LTF is a powerful MOSFET with an on-resistance (RDSon) of only 13 mΩ (max) at 10 V. It is a Single n-Channel Enhancement Mode MOSFET available in an SMD package. This small package enables its use in a wide variety of applications like driving loads faster with improved switching characteristics. Its low gate charge and high current carrying capability make it a great choice for battery powered and portable applications.
The FQT13N06LTF is mainly used as a switch for motor control and battery management. It is also suitable for high-speed switching, such as operating level converters and gate drivers, as well as high/low side switches. Air-conditioner controllers, smart appliances, DC/DC converters, audio amplifiers, and various automotive applications can all benefit from these devices.
The FQT13N06LTF is a N-channel enhancement mode MOSFET, meaning it is activated by an input voltage that is greater than the threshold voltage. When this voltage is exceeded, the current flow between the drain and the source can become very large. This phenomenon is known as the conducting state, and it is what allows FQT13N06LTF to control current flow effectively in different types of circuits. The voltage is applied to the gate in order to enable the current flow.
One of the important characteristics of FQT13N06LTF is the low input gate charge. This enables the device to be used in high current applications like motor control, where the gate charge must remain low in order to limit the dissipation of the MOSFET.
In addition to its low gate charge and low on-resistance switch characteristics, the FQT13N06LTF has a wide range of operating temperature (-55°C to +175°C), making it suitable for use in a variety of applications. Also, the FQT13N06LTF has a protected drain-source operation, which means it will not be destroyed due to accidental reversing of the wiring. This helps to ensure the safety of the MOSFET, and thus the safety of the overall system.
As with any semiconductor, the FQT13N06LTF can be used in a variety of applications as long as the correct components and operating conditions are selected. The FQT13N06LTF is an incredibly versatile device that can be utilized in a number of tasks, such as motor control, battery management, high-speed switching, and level shifting. In this way, FQT13N06LTF provides a powerful and reliable solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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