FQT13N06TF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223-4
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.1W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	310pF @ 25V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	7.5nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	140 mOhm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.8A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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FQT13N06TF is a N-channel Field Effect Transistor. It is the most widely used type of transistor in the market and has a wide range of applications due to its small size and low power consumption. The device is made up of two semiconductors, a source and drain electrode.In order to understand the working principle and application field of FQT13N06TF, it is important to understand the basic working principle of a field effect transistor. A field effect transistor works on the principle of electrical charge and current passing through a semiconductor material. When a current is passed through a field effect transistor, a voltage is applied across the gate terminal of the device and results in a charge transfer across the gate, which then modulates the resistance of the channel between the source and the drain. The current flow between the source and drain electrodes is thereby regulated by the amount of applied voltage across the gate, which is known as the "threshold voltage".In FQT13N06TF, the N-channel type of field effect transistor is used. This type of transistor works by applying an electric field to the gate of the device, which attracts charge carriers, or electrons, from the source to the drain. This creates an N-channel which allows the current to flow between the source and drain. The drain current is therefore modulated by the amount of electric filed applied at the gate.FQT13N06TF is mainly used for power switching applications, such as relay control, motor speed control, LED control, and more. The device is commonly used in power control systems, power amplifiers, audio amplifiers, and other applications that require high switching speed and low power consumption. This device is also used in digital signal processors and microcontrollers which require high switching speed and low power consumption. The application fields of FQT13N06TF are mainly related to power electronics, where it is used in power switching applications such as motor speed control, relay control, and LED control. In addition, this device is also used in digital signal processors and microcontrollers where high switching speed and low power consumption is needed.In summary, FQT13N06TF is a N-channel type of field effect transistor that is used in a wide range of applications. This device is mainly used for power switching applications and signal processing, where it is designed to remain consistent throughout its operating temperature range. It is also designed to have low power consumption and high switching speed, which make it an ideal choice for many applications.

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