| Allicdata Part #: | FQT1N80TF-WSTR-ND |
| Manufacturer Part#: |
FQT1N80TF-WS |
| Price: | $ 0.34 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 800V 0.2A SOT-223 |
| More Detail: | N-Channel 800V 200mA (Tc) 2.1W (Tc) Surface Mount ... |
| DataSheet: |  FQT1N80TF-WS Datasheet/PDF |
| Quantity: | 1000 |
| 4000 +: | $ 0.30622 |
| Series: | QFET® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 800V |
| Current - Continuous Drain (Id) @ 25°C: | 200mA (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 20 Ohm @ 100mA, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 7.2nC @ 10V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 195pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 2.1W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | SOT-223-3 |
| Package / Case: | TO-261-4, TO-261AA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FQT1N80TF-WS is a Insulated Gate bipolar transistor (IGBT) developed by Fuji Electric. It is designed for high power switching applications. This device is suitable for use in video, solvent-based printers, CNC machine tools, motor drives, and power energy systems. With features such as fast recovery time, low gate charge, low on-state voltage drop, and high performance, the FQT1N80TF-WS is an ideal choice for various high power circuits.
The FQT1N80TF-WS is a normally-on type, N-Channel building block MOSFET with an on-state breakdown voltage rating of 800V and a drain current rating of 10A. The device is composed of a N-Channel MOSFET and a photovoltaic cell. The photovoltaic cell acts as an insulated gate and isolates the gate from the drain and source. The operation of the device is simple and straightforward. When a small, positive voltage is applied to the gate, the N-Channel MOSFET is immediately energized, allowing the current to flow from the drain to the source.
The high breakdown voltage of the FQT1N80TF-WS makes it a great choice for applications that require high voltage. The photovoltaic cell of the device allows it to be used in higher voltage applications, as it isolates the gate from the source and drain, preventing it from being destroyed by high voltage. This feature also helps to protect other components from high voltage. The on-state voltage drop of the FQT1N80TF-WS is very low, and it is rated for a drain current of up to 10A.
In addition to its high breakdown voltage and low on-state voltage drop, the FQT1N80TF-WS also offers fast recovery time. When the gate voltage falls back to zero, the on-state current is quickly and completely shut off. This fast recovery time makes the device an ideal choice for switching applications. The device also has a low gate charge, which helps to reduce power consumption.
The FQT1N80TF-WS is a great choice for applications requiring a high breakdown voltage and fast recovery time. It is well suited for video, solvent-based printers, CNC machine tools, motor drives, and power energy systems. The low on-state voltage drop and low gate charge of the device make it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| FQT1N80TF-WS | ON Semicondu... | 0.34 $ | 1000 | MOSFET N-CH 800V 0.2A SOT... |
| FQT1N60CTF-WS | ON Semicondu... | -- | 28000 | MOSFET N-CH 600V 0.2A SOT... |
| FQT13N06TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 2.8A SOT-... |
| FQT13N06LTF | ON Semicondu... | -- | 4000 | MOSFET N-CH 60V 2.8A SOT-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...