| Allicdata Part #: | FQU3N50CTU-ND |
| Manufacturer Part#: |
FQU3N50CTU |
| Price: | $ 0.75 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 500V 2.5A IPAK |
| More Detail: | N-Channel 500V 2.5A (Tc) 35W (Tc) Through Hole I-P... |
| DataSheet: | FQU3N50CTU Datasheet/PDF |
| Quantity: | 5040 |
| 1 +: | $ 0.75000 |
| 10 +: | $ 0.72750 |
| 100 +: | $ 0.71250 |
| 1000 +: | $ 0.69750 |
| 10000 +: | $ 0.67500 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | I-PAK |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 35W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 365pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 1.25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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A field-effect transistor (FET) is a type of transistor that utilizes an electric field to control the current flowing through it. The FQU3N50CTU is the shorthand name for a modern N-Channel Junction Field Effect Transistor (JFET). N-channel transistors are a subset of FETs that require a negative voltage present at the gate (the input of the transistor) in order to turn the controllable current on. This model is developed by Fairchild Semiconductor and is a “high-voltage, high-speed power MOSFET.”
The FQU3N50CTU is a metal-oxide semiconductor FET (MOSFET) which means that it is engineered using a semiconductor sandwiched between metal and oxide layers. As a general rule, MOSFETs require less voltage (between 5-12 volts) to turn the controllable current on than other FETs. The FQU3N50CTU is unique in that it has a maximum operating voltage of 500 volts and a maximum continuous drain current of 13A.
The applications of the FQU3N50CTU range from small circuit boards to large electrical grids. Its high current capability and low power dissipation makes it ideal for use in a variety of loads. It can be used in switching Relays, Automotive Electronics, Battery chargers, AC/DC power conversion, Medical Devices, Power Supplies & Inverters and Motor Control. Additionally, its high voltage capability makes it suitable for both AC and DC power applications.
The working principle behind the FQU3N50CTU is deceptively simple. It has three pins: the gate, the drain, and the source. When a negative voltage is applied to the gate, the current flowing between the drain and the source increases significantly. This is because the voltage available at the source (to "pull" electrons into the circuit) decreases due to the negative voltage at the gate. This decrease in voltage makes it easier for electrons to flow between the drain and the source, thus increasing the current.
The FQU3N50CTU is a powerful and reliable transistor that is well suited to a wide variety of applications. Its high voltage and current capabilities coupled with its low power dissipation make it a great choice for any circuit. Its straightforward working principle makes it easy to understand and use safely and effectively.
The specific data is subject to PDF, and the above content is for reference
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FQU3N50CTU Datasheet/PDF