FQU3P50TU

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FQU3P50TU is a type of n-channel power MOSFET designed for various power management applications. The FQU3P50TU is a monolithic, low on-state resistance (RDS(On)) MOSFET with a d-mode stable body diode. This MOSFET is ideal for use in audio amplifiers, motor control, and switching applications, as well as for the high side and low side logic-level drive signals.

FQU3P50TU is designed on the basis of a special structure that has both a high-mobility n-channel field effect transistor together with its own integrated diode. The diode connection is isolated from the transistor channel, so it has very fast switch on and off times. Also, the low on-state resistance (RDS(On)) of the MOSFET results in a low conduction loss.

The FQU3P50TU utilizes a process known as Shottky-diode technology to optimize the channel resistance, reduces RDS(On), and allows for a higher switching performance compared to conventional power MOSFETs. This process makes FQU3P50TU better suited to applications that require rapid circuit response to transient signals. In addition, FQU3P50TU is able to handle large amounts of current with very low gate charge that makes it suitable for high-power switching applications.

Due to its fast switching speed, low on-state resistance, and superior thermal characteristics, FQU3P50TU is an ideal choice for a wide range of applications including:

• Audio amplifiers
• Motor control
• High-speed switching applications
• Circuit protection
• High-side and low-side logic-level drive signals

FQU3P50TU has a total gate charge of only 4.5 nC and a 60V Vds operation voltage. It has an absolute maximum rating of 175A current and 56mΩ on-state resistance. The FQU3P50TU is available in an SOT-223 surface-mount package with a maximum power dissipation of 1.59W. It has an operating temperature range of 140°C.

The working principle of FQU3P50TU is simple – when a voltage is applied between the gate and the source of the FET, the transistor is turned "on" and the current will then flow between the drain and the source. If a negative voltage is applied between the gate and the source, the FET will "turn off" and the current will no longer flow between the drain and the source. This principle enables FQU3P50TU to be used in switching and power management applications.

FQU3P50TU is an ideal choice for a wide range of power management applications due to its low on-state resistance, high current capabilities, fast switching, and exceptional thermal characteristics. It is designed to be very reliable, efficient, and affordable, making it a great choice for many applications.

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