Allicdata Part #: | FQU3N60TU-ND |
Manufacturer Part#: |
FQU3N60TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 2.4A IPAK |
More Detail: | N-Channel 600V 2.4A (Tc) 2.5W (Ta), 50W (Tc) Throu... |
DataSheet: | FQU3N60TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 1.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQU3N60TU is an N-channel enhancement-mode power field-effect transistor (FET). This type of power FET is important because the transistor’s operation is based on the application of a voltage at the gate to control the current that passes through the source and drain. This particular device is rated to handle 600 volts, and it has a very low on-resistance (3 milliohms).
FETs are used in a variety of applications where a relatively large amount of current needs to be controlled. The most common use of FETs is in power supply circuits, where they can be used to regulate the current flowing through the circuit. they are also used in motor control applications, and they can be used to switch loads on and off quickly and reliably. Additionally, FETs are often used as voltage-controlled resistors, where the resistance of the FET is controlled by applying a voltage to the gate terminal.
The working principle of the FQU3N60TU is based on the application of a voltage to the gate terminal of the transistor. The voltage controls the flow of current through the source and drain terminals of the device. The current is modulated by the voltage on the gate pin, with the current increasing as the gate voltage is increased. This makes it possible to control the current through the device easily and reliably.
The FQU3N60TU can be used in a wide variety of applications. Its 600V rating makes it suitable for both AC and DC motor control applications. Its low on-resistance makes it ideal for switching loads quickly and reliably, while its voltage-controlled resistance makes it suitable for use as a voltage-controlled resistor. Additionally, the FQU3N60TU can be used in power supply circuits, where its low on-resistance allows it to regulate current efficiently.
In summary, the FQU3N60TU is an N-channel enhancement-mode power field-effect transistor (FET). This type of power FET is important because the transistor’s operation is based on the application of a voltage at the gate to control the current that passes through the source and drain. The FQU3N60TU is suitable for a wide variety of applications, including motor control, switching loads, voltage-controlled resistors, and power supply circuits. The working principle of the FQU3N60TU is based on the application of a voltage to the gate terminal of the transistor, which modulates the current passing through the source and drain.
The specific data is subject to PDF, and the above content is for reference
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