Allicdata Part #: | FQU6N25TU-ND |
Manufacturer Part#: |
FQU6N25TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 250V 4.4A IPAK |
More Detail: | N-Channel 250V 4.4A (Tc) 2.5W (Ta), 45W (Tc) Throu... |
DataSheet: | FQU6N25TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 300pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 2.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.4A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Modern advancements in electronics have led to the development of various complex transistors and application-specific integrated circuits (ASICs). Transistors are electronic devices used to regulate and manipulate electric current and voltage. Field-effect transistors (FETs) are a sub-class of transistors and are used to control either the current or voltage in a circuit. They are an essential component of the modern electronic devices used in everyday life, including cell phones, computers, and televisions.
FQU6N25TU is one type of FET and it is commonly used in automotive and communications applications. This type of FET is made with a unique semiconductor material, gallium nitride (GaN), which has superior properties compared to the more commonly used silicon. GaN is a wide bandgap material and has world-class breakdown voltage and thermal resistance, making the FQU6N25TU ideal for automotive, medical, and telecommunications applications. GaN is also known for its excellent performance in high-frequency circuits.
FQU6N25TU is a single-gate FET, which means that it has a single conductive gate on its substrate. This type of FET allows current to flow through its gate as long as the gate remains positively charged. The current can then be regulated by varying the charge on the gate. The FQU6N25TU also has a high frequency operation range of up to 5 MHz. This makes it suitable for use in high-speed communications and data processing applications.
The FQU6N25TU offers many advantages including excellent heat dissipation, low input and output capacitance, low gate charge, low gate resistance, and low on-resistance. All of these properties make the FQU6N25TU highly efficient and suitable for a wide range of electronics applications. The FQU6N25TU also has an integrated ESD protection circuit that helps protect the device from electrostatic discharge.
Overall, the FQU6N25TU is an advanced FET that can be used in a variety of applications, from automotive and medical equipment to telecommunications and data processing. Its superior properties, combined with its wide range of operating frequencies, make it an excellent choice for highly efficient, operational circuits. The FQU6N25TU is a reliable and efficient component that is sure to find its place in the ever-evolving world of electronics.
The specific data is subject to PDF, and the above content is for reference
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