FQU6N50CTU Allicdata Electronics
Allicdata Part #:

FQU6N50CTU-ND

Manufacturer Part#:

FQU6N50CTU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 4.5A IPAK
More Detail: N-Channel 500V 4.5A (Tc) 2.5W (Ta), 61W (Tc) Throu...
DataSheet: FQU6N50CTU datasheetFQU6N50CTU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 61W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FQU6N50CTU is a product of a N-channel JFET transistor. With exceptional switching and amplifier characteristics and an ultra-low power drain, the FQU6N50CTU makes it a useful device in many applications. In this article, we will discuss the various applications of the FQU6N50CTU and explore the principles behind its operation.

Among its many uses, the FQU6N50CTU is a very popular choice for analog signal balancing, replacing resistors in many applications. It is quite suitable for implementing on-off switching, voltage controlled filters, and many other applications requiring linear amplification, frequency control, and switching. As mentioned before, due to its ultra-low power drain, the FQU6N50CTU is a perfect terminal for many wide-band applications, which is an added bonus.

In terms of its physical structure, the FQU6N50CTU is a high-frequency single N-channel JFET with a double gate and a combination of P-type and N-type materials. It has several distinctive features that make it suitable for a wide range of applications including high amplification, low power consumption, and low-noise operation.

The FQU6N50CTU works on the principle of FET (Field Effect Transistor). It utilizes the gate-to-bias voltage to make the N-type channel more conductive, thus allowing current to flow between the source and the drain. This results in conduction between its terminals and allows for amplification. It also has a higher input impedance compared to similar transistors, making it ideal for circuits with high sensitivity.

In essence, the FQU6N50CTU is an excellent choice for many levels of voltage amplification, signal control, and power conservation. As a result, it is a key component for many industrial applications. It is also used for signal balancing and modulation with exceptional performance results.

FQU6N50CTU has a considerable array of uses in the consumer electronics sector. It is used in the production of smartphones, televisions, gaming consoles, and other such gadgets. It is also used in the manufacture of home audio, sound systems, and various audio instruments.

Overall, the FQU6N50CTU is an excellent choice for a variety of applications. It is a powerful device with a low power drain, great amplification and signal control, and wide-band applications. It also shows excellent performance results in signal-balancing applications and is a key component in the consumer electronics industry.

The specific data is subject to PDF, and the above content is for reference

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