FQU6N40CTU_NBEA001

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQU6N40CTU_NBEA001 is a unipolar N-channel enhancement mode power field-effect transistor (FET) which is widely used in amplifier circuit designs. It is usually packaged in a standard TO-220 plastic case and is designed to operate in the -55°C to +150°C temperature range, with a breakdown voltage (BVDSS) of 400 volts. This FET utilizes a composite construction that combines a vertical N-channel depletion mode MOSFET and an avalanche-rated FET in a single state.

The construction of the FQU6N40CTU_NBEA001 power FET is such that it requires a lower gate voltage than other N-channel depletion mode FETs in order to turn "on". When the drain-source voltage (VDS) raises above the turn-on voltage (VDSon), the FET will begin to allow current to flow. It\'s inherently linear operating region even provides superior immunity to over temperature, making it a popular choice among power FETs.

The FQU6N40CTU_NBEA001 power FET is mainly used in amplifier circuit designs. Because of its low drain to source input capacitance, it is suitable for high frequency applications, such as audio, signal processing, and communications. It can also be used for switch mode power supplies (SMPS) or DC-DC converters, which are ideal for PC power supply designs and consumer electronics.

The working principle of the FQU6N40CTU_NBEA001 power FET is based on its ability to control the flow of current between its source and drain as it is either turned on or off by a voltage applied to its gate. When the FET turns "on," it allows current to flow from the source to the drain. This can be used to amplify signals or switch high voltage and/or large currents. When the FET is turned "off," it essentially operates as an insulator, preventing current from flowing.

The FQU6N40CTU_NBEA001 power FET is capable of controlling high voltages and current efficiently and effectively. Its composite construction and avalanche-rated design make it highly robust, allowing it to operate in demanding applications with high reliability. In summary, the FQU6N40CTU_NBEA001 power FET has a wide variety of uses and is a reliable and efficient choice for numerous amplifier and switching applications.

The specific data is subject to PDF, and the above content is for reference