Allicdata Part #: | FQU7N20TU-ND |
Manufacturer Part#: |
FQU7N20TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 5.3A IPAK |
More Detail: | N-Channel 200V 5.3A (Tc) 2.5W (Ta), 45W (Tc) Throu... |
DataSheet: | FQU7N20TU Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 690 mOhm @ 2.65A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FQU7N20TU is a depletion-mode N-Channel MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor ) with a gate-source voltage V_GS(th) of -4V. The FQU7N20TU is a popular choice for many applications due to its low R_DS(on) and low capacitances.
Application Field of FQU7N20TU
FQU7N20TU is commonly used as switches, load controllers, voltage regulators, protection elements and analog switches in various electronic circuits and systems. Due to its low R_DS(on) and low capacitances, it is well suited for switch-mode power circuits or other sensitive analog or digital circuits. For example, it can be used for switching loads up to 700V in power supplies, solar inverters, motor controllers and other circuits. In addition, it can be used as an analog switch for controlling signals, as well as voltage regulators and current limiters for controlling power supply levels.
Working Principle of FQU7N20TU
In a depletion-mode MOSFET, the gate-source voltage V_GS(th) needs to be negative to turn the device on. When V_GS(th) is negative, it will attract electrons through the gate, allowing current to flow through the drain and source. As V_GS(th) further decreases, the current will increase exponentially. Once a certain point is reached, the current is saturated. This is known as the saturation voltage. The saturation voltage can be adjusted by changing the gate-source voltage. The R_DS(on) of a FQU7N20TU can be adjusted by controlling the gate-source voltage according to the application requirements.
The FQU7N20TU also has a high-voltage capability, which makes it well suited for switching loads up to 700V safely and efficiently. In addition, the low capacitances and on-resistance of the FQU7N20TU make it suitable for high speed switching applications. For example, it can be used for switching loads with high speed in the kHz range.
FQU7N20TU is a popular choice for many applications due to its low on-resistance and low capacitances. Its high-voltage capability and fast switching speed make it suitable for switching high voltage loads safely and efficiently, as well as for controlling analog and digital signals. Its low cost and easy to use design make it a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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