Allicdata Part #: | FQU7P06TU_NB82048-ND |
Manufacturer Part#: |
FQU7P06TU_NB82048 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 5.4A IPAK |
More Detail: | P-Channel 60V 5.4A (Tc) 2.5W (Ta), 28W (Tc) Throug... |
DataSheet: | FQU7P06TU_NB82048 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | QFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 451 mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 295pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 28W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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FQU7P06TU_NB82048 is a type of field effect transistor (FET) specifically classified as a metal-oxide-semiconductor field-effect transistor (MOSFET). This type of transistor is a single type, meaning it consists of a single terminal source, a single gate, and a single drain. Compared to other types of FETs, the diode between gate and source is not necessary for this type. The FQU7P06TU_NB82048 operates by using the electric field generated by the gate-source to control the current flow between the source and the drain, similar to a light switch.
The FQU7P06TU_NB82048 is most commonly used as a switch or amplifier, as it is able to take signals from the source and amplifying or reducing it as needed. It is an ideal choice for applications that require precise control of current, such as amplifying or switching signals from low-level signals or providing insulation between sections of circuits. This device is also commonly used in areas such as automotive electronics, home appliances and telecommunications.
The FQU7P06TU_NB82048 is an N-channel MOSFET, meaning it is able to conduct current through the channel between source and drain when a positive voltage is applied to the gate. It also uses a vertical MOS (VMOS) structure, which allows for reduced on-resistance values, along with a low gate threshold voltage. A low threshold voltage is important as it allows for less voltage to be used to control the device. This is advantageous compared to other types of MOSFETs, as often higher voltages are required to control them.
In terms of working principle, the FQU7P06TU_NB82048 utilizes a process of inversion when controlling the current. When an electric field is applied to the gate, electrons are attracted towards the gate and away from the channel, creating a depletion region which restricts the current from the source to the drain. This is known as the OFF-state where the FQU7P06TU_NB82048 does not conduct current. When the electric field is removed, electrons in the channel are free to move and so a conduction path is formed. This is known as the ON-state, where the device conducts current.
Overall, the FQU7P06TU_NB82048 metal oxide-semiconductor field-effect transistor is an ideal choice for various types of applications. It is used as a switch and amplifier in various areas such as automotive electronics, home appliances, and telecommunications. The FQU7P06TU_NB82048 is an N-channel MOSFET with a VMOS structure, allowing for low on-resistance values and low gate threshold voltage. When controlling the current, the transistor utilizes a process of inversion, which creates a depletion region in the channel and restricts current when the electric field is applied to the gate.
The specific data is subject to PDF, and the above content is for reference
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