FQU7P06TU

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 28W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	295pF @ 25V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	8.2nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	451 mOhm @ 2.7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	5.4A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

FQU7P06TU is an advanced MOSFET (metal-oxide-semiconductor field-effect transistor) device from Fairchild Semiconductor. It is part of the company\'s QFET (Quad Flat No-Lead) family of FETs, It is a low-side N-channel “enhancement” (normally OFF) mode MOSFETs providing high-speed switching and improved performance. In this article, the application field and working principle of FQU7P06TU will be discussed.

Application Field of FQU7P06TU

The FQU7P06TU is a great option for many applications. It is suitable for use in high-speed switching, power management, battery management, and energy harvesting applications. It can be used in circuits with analog and digital power control and can be applied in industries such as automotive, datacom, and telecomm. It is in use in circuits such as motor controls, LED lighting applications, battery management, power management, and power conversion applications. The device is also suitable for use in high-frequency switching applications. Moreover, its advanced drain-to-source process and N-channel enhancement mode allow for improved switching performance.

Working Principle of FQU7P06TU

The FQU7P06TU is an N-channel enhancement-mode MOSFET, which means that it can be turned off with a low signal level, and turned on with a stronger signal level. The device is unique due to its advanced drain-to-source process and N-channel enhancement mode. When the drain-source voltage (V_DS) is increased, an electric field is formed, which causes a mobile charge carrier and drain current (I_D) to flow. This current will increase and decrease in proportion to the amount of V_DS, allowing for precise control of the device. The FQU7P06TU has a gate-source voltage (V_GS) which determines its switching performance. When the voltage is increased, the electric field between the gate and the channel becomes stronger and the device will remain in an “enhanced” state. When the voltage is decreased, the electric field between the gate and the channel becomes weaker and the device will be turned off. When the device is in an “off” state, no current will flow. However, when the voltage is increased, the electric field between the gate and the channel becomes stronger and the device will turn on, allowing current to flow. This ability to control the switching of the device allows it to be used in many applications.

Conclusion

The FQU7P06TU is a unique MOSFET device from Fairchild Semiconductor that has a wide range of potential applications. It is an N-channel enhancement-mode device, allowing for precise control and improved performance. The device is suitable for use in power management, battery management, motor control, and other high-frequency switching applications. Its advanced drain-to-source process and N-channel enhancement mode provide improved switching performance.

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