FZ2400R12HE4B9HOSA2

FZ2400R12HE4B9HOSA2 is an insulated gate bipolar transistor (IGBT) power module which belongs to the family of semiconductor devices including the field-effect transistors and the bipolar junction transistors. The IGBT device is manufactured by Fujitsu Components and is a valuable addition to the list of FZ2400 products available in the market. This device has a very high-switching frequency and is ideal for various applications requiring high-efficiency, high-power and high-speed switching.

Application Field and Working Principle

FZ2400R12HE4B9HOSA2 is suitable for use in automotive, power management, motor control and other power conversation applications. It provides low conduction loss, high switching performance and High-Speed switching. The high-speed switching feature is achieved by the device thanks to its optimized package design including the additional drain to source resistance and the improved gate turn-off time. Its high power operation results from the integrated series connected diodes and the interruption capability of current up to 1600A.

FZ2400R12HE4B9HOSA2 can work in three possible states: cut-off, linear and saturation. In the cut-off state, the control gate of the device is not triggered, no current flows from the drain to the source and the device is in the “OFF” state. In the linear mode, the device is triggered and a certain amount of current flows from the drain to the source. In this state, the device is operating in a linear manner and the voltage difference between the drain and the source is constant. In saturation mode, the current flow is at its highest and the power gain of the device is at its maximum.

Moreover, FZ2400R12HE4B9HOSA2 has a breakdown voltage rating of 1200V and a collector current rating of 16A. This makes it suitable for use in applications where drivers must handle large currents and high voltages. It also has a gate turn-off time of 2.2 ns which makes it suitable for high-speed converters. The device has a junction temperature rating of -55C to +150C which makes it suitable for use in a wide variety of temperature conditions and environments.

Furthermore, FZ2400R12HE4B9HOSA2 has low conduction losses and low gate turn-on times which make it highly efficient. It also has an on-state resistance of 2.6 ohms which makes it reasonably useful for applications where power conservation is a priority. The device has a current limit as low as 5A, thus making it suitable for applications such as motor control.

In addition, FZ2400R12HE4B9HOSA2 has an ESD protection up to 6 kV which makes it resistant to electrostatic discharges. It also has a package which provides a heat dissipation rating of 28.2 C/W, thus making it suitable for various heat management applications. Furthermore, it features an integrated snubber network which helps to protect the device against high-speed switching transients.

Overall, FZ2400R12HE4B9HOSA2 is an excellent power module and is suitable for a wide range of applications including automotive, power management and motor control. Its high-speed switching, low conduction losses and high voltage and current ratings make it suitable for a wide range of applications. Furthermore, its ESD protection and high thermals make it suitable for use in various temperature and environmental conditions. As such, it is an excellent choice for many high-efficiency, high-power and high-speed switching applications.