Allicdata Part #: | FZ2400R12HE4PB9HPSA1-ND |
Manufacturer Part#: |
FZ2400R12HE4PB9HPSA1 |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MODULE IGBT IHMB190-2 |
More Detail: | IGBT Module Trench Field Stop Full Bridge 1200V 24... |
DataSheet: | FZ2400R12HE4PB9HPSA1 Datasheet/PDF |
Quantity: | 1000 |
3 +: | $ 0.63000 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Full Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 2400A |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 2400A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 150nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Introduction To FZ2400R12HE4PB9HPSA1 Application Field & Working Principle
The FZ2400R12HE4PB9HPSA1 is a high power IGBT (Insulated Gate Bipolar Transistor) module developed and produced by ABB for Medium Voltage applications. The module has a maximum input voltage of up to 900V and it can handle currents up to 2400A. The module has excellent performance in regards to thermal cycling and can be used in a wide range of applications.
Application Fields
A module such as the FZ2400R12HE4PB9HPSA1 can be used in many different applications. It is suitable for switching, controlling and protection of high-voltage and high-current circuits. The module is used for traction applications, including locomotives, high-speed trains, underground lines and metro systems. It is also often used in power transmission and distribution applications such as solar power plants.
Working Principle
The FZ2400R12HE4PB9HPSA1 IGBT module is based on the principle of an insulated-gate bipolar transistor (IGBT). This is a power switching device that combines the best features of both a bipolar junction transistor (BJT) and a field-effect transistor (FET). It has the high current carrying capacity of a BJT and the high switching speed of a FET.
The main components of an IGBT module like the FZ2400R12HE4PB9HPSA1 are the IGBTs, a diode and a gate driver IC. The IGBTs are insulated from each other by an insulating layer. A gate driver IC is used to control the voltage applied to the gate of the IGBTs, which in turn controls the conduction and switching of the IGBTs.
When the gate driver IC applies a positive voltage to the gate of the IGBTs, this causes the IGBTs to enter the on-state where they act like closed switches, allowing current to flow. When the gate driver IC applies a negative voltage to the gate of the IGBTs, this causes the IGBTs to enter the off-state and the switch is open. This switching action of the IGBTs provides fast current control with minimal losses.
Advantages and Features
The FZ2400R12HE4PB9HPSA1 IGBT module has several advantages and features that makes it suitable for high power applications. Its low switching losses, high speed switching and good thermal cycling characteristics are some of its most important features.
The module is also designed to provide a very high level of reliability. It is built with heating elements that can withstand high temperatures, and it has an overload protection mechanism that will shut down the module if the current overloads for more than a few milliseconds.
Due to its excellent performance in different applications, the FZ2400R12HE4PB9HPSA1 is often used in solar power plants, traction applications and power transmission and distribution systems. It is one of the most reliable and efficient IGBT modules available in the market today.
The specific data is subject to PDF, and the above content is for reference
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