| Allicdata Part #: | FZ2400R17HP4B29BOSA2-ND |
| Manufacturer Part#: |
FZ2400R17HP4B29BOSA2 |
| Price: | $ 0.69 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MODULE IGBT IHMB190-1 |
| More Detail: | IGBT Module Trench Field Stop Single Switch 1700V ... |
| DataSheet: |  FZ2400R17HP4B29BOSA2 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.63000 |
Specifications
| Series: | -- |
| Part Status: | Active |
| IGBT Type: | Trench Field Stop |
| Configuration: | Single Switch |
| Voltage - Collector Emitter Breakdown (Max): | 1700V |
| Current - Collector (Ic) (Max): | 4800A |
| Power - Max: | 15500W |
| Vce(on) (Max) @ Vge, Ic: | 2.25V @ 15V, 2400A |
| Current - Collector Cutoff (Max): | 5mA |
| Input Capacitance (Cies) @ Vce: | 195nF @ 25V |
| Input: | Standard |
| NTC Thermistor: | No |
| Operating Temperature: | -40°C ~ 150°C |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | Module |
Description
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FZ2400R17HP4B29BOSA2 is a module containing two insulated gate bipolar transistors (IGBTs) produced by Fuji Electric. A module like this is a semiconductor that offers an increased level of performance and convenience due to its bidirectional power switching and dual IGBT design. In order to understand the application field and working principle of this IGBT module, it is important to understand its components, structure and features. The FZ2400R17HP4B29BIGA2 module has two IGBTs, each of which is an insulated gate device that is capable of either conducting current as a bipolar transistor, or blocking it as an insulated gate field-effect transistor. In order to control the switching of the IGBTs, bi-directional control and protection circuitry is included in the module, allowing opto-isolated gate drive signals to be provided. This allows high switching speeds, while the insulated gate keeps the device isolated from external interference. The module also has a total collector-emitter voltage rating of 1700 volts, making it suitable for high-voltage applications.The module can be used in various industrial applications, such as motor drives, power supplies, battery chargers, and even alternatively powered vehicles. This is due to its ability to conduct current in either direction, and its dual IGBT design allows for higher efficiency and higher power levels than what a single IGBT device is capable of. Furthermore, the module’s isolated gate drive signals mean that its switching speed is faster and its response to external noise is decreased.In order to understand the working principle of the FZ2400R17HP4B29BOSA2 module, it is important to take a closer look at its components and structure. At the heart of the module is a pair of IGBTs, which are connected in an anti-parallel configuration. This means that they can both drive current in either direction, freeing up the topology of the module’s design. To control the switching of the IGBTs, a bi-directional control and protection circuitry is included in the module, which includes an opto-isolator and a current sensor. These two components are necessary if the module is to function efficiently and effectively. When the module is turned on, the current sensor will register the voltage level and the opto-isolator will switch the IGBTs on or off depending on the voltage level, allowing the module to be switched quickly and precisely with minimal external interference.In conclusion, the FZ2400R17HP4B29BOSA2 module is a semiconductor device designed for high voltage industrial applications, offering an improved level of performance and convenience due to its bidirectional power switching and dual IGBT design. This device is able to conduct current in either direction, and its bi-directional control and protection circuitry allow for quick, low noise switching. In addition, the module’s 1700 volt collector-emitter voltage rating makes it suitable for high-voltage applications.The specific data is subject to PDF, and the above content is for reference
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