FZ2400R12HP4B9HOSA2

Series:	--
Part Status:	Active
IGBT Type:	Trench
Configuration:	Single Switch
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	3550A
Power - Max:	13500W
Vce(on) (Max) @ Vge, Ic:	2.05V @ 15V, 2400A
Current - Collector Cutoff (Max):	5mA
Input Capacitance (Cies) @ Vce:	150nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FZ2400R12HP4B9HOSA2 module is a type of transistor specially designed for switching applications in low voltage, high current systems. It has a number of advantages over other types of switching devices such as MOSFETs, Bipolar Junction Transistors (BJTs), and Insulated Gate Bipolar Transistors (IGBTs). The FZ2400R12HP4B9HOSA2 is a highly efficient and reliable device that can be used in a wide range of applications, where low switching losses and high current are desired.The FZ2400R12HP4B9HOSA2 can handle high current with low switching losses. It has high packing density and low thermal resistance, allowing it to be used in cramped power systems where space is a premium. The FZ2400R12HP4B9HOSA2 module also has a high breakdown voltage, with a maximum of 1800V. This makes it an ideal choice for high voltage applications.In terms of its application fields, the FZ2400R12HP4B9HOSA2 can be used for motor control, lighting control, rectification, and uninterruptible power systems (UPS). It can be used in conjunction with PWM controllers in order to achieve high precision motor control. It is also commonly used in solar panel inverters, as it is designed for efficient operation in harsh and high ambient temperatures.The FZ2400R12HP4B9HOSA2 module has multiple protection and monitoring features built in. These include an over current protection, which prevents the module from becoming damaged due to an over current situation. It also has a voltage monitoring function and an over temperature protection, which protects the module from overheating.The working principle of the FZ2400R12HP4B9HOSA2 module is simple. It has two primary components: an IGBT (Insulated Gate Bipolar Transistor) and a diode. When the module is turned on, the IGBT acts as a closed switch, allowing current to flow through the module. The diode allows current to flow in a single direction, preventing any backflow. When the module is turned off, the IGBT acts as an open switch and does not allow any current to flow through it. The diode continues to protect the module from backflow, preventing any voltage spikes or surges.Overall, the FZ2400R12HP4B9HOSA2 module is an excellent choice for power systems that require high performance and reliability. With its high current capabilities and low switching losses, it can be used in a wide range of applications, from motor control to solar panel inverters. Its multiple protection and monitoring features make it a highly secure choice, while its efficient operation in harsh temperatures makes it an ideal choice for applications in developing markets.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description