FZ2400R17HP4B9HOSA2

Series:	--
Part Status:	Active
IGBT Type:	Trench
Configuration:	Single Switch
Voltage - Collector Emitter Breakdown (Max):	1700V
Current - Collector (Ic) (Max):	4800A
Power - Max:	15500W
Vce(on) (Max) @ Vge, Ic:	2.25V @ 15V, 2400A
Current - Collector Cutoff (Max):	5mA
Input Capacitance (Cies) @ Vce:	195nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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FZ2400R17HP4B9HOSA2 Application Field and Working Principle

Introduction

FZ2400R17HP4B9HOSA2 is an insulated-gate bipolar transistor (IGBT) module manufactured by Infineon Technologies. IGBT modules provide high-performance electric power solutions, and this particular module is suitable for applications in the industrial, automotive, and consumer markets.

Application Field

FZ2400R17HP4B9HOSA2 is ideally suited for high-end industrial applications such as high-frequency power conversion, motor control, and welding equipment. Its high switching speed makes it well suited for applications where a high-frequency response is required.In addition to providing an ideal solution for many high-end industrial applications, FZ2400R17HP4B9HOSA2 is also suitable for applications in the automotive and consumer markets. Its ruggedness and high-reliability make it well suited for automotive applications, while its high power density makes it suitable for consumer applications such as portable electronics and power tools.

Working Principle

The FZ2400R17HP4B9HOSA2 is an IGBT module, an electronic semiconductor device which combines the characteristics of a metal-oxide-semiconductor field-effect transistor (MOSFET) and a bipolar junction transistor (BJT). An IGBT module consists of several IGBT cells, which each typically contain two BJTs and one MOSFET. An IGBT cell contains a gate-emitter structure comprising a lightly-doped drift layer, an intrinsic base, and a control gate. Between the drift layer and intrinsic base is the P-N junction, known as the collector-emitter junction, which is where the current flow will occur when the gate voltage is applied.The insulated gate of an IGBT module is used to control the flow of current through the collector-emitter junction, as well as the current flowing into the drain terminal of the MOSFET. This makes it possible to switch the current on and off quickly and with virtually no losses, making an IGBT module very efficient and capable of handling large currents.The huge advantage of the IGBT module is its ability to switch high currents quickly, while also delivering high efficiency and low losses. The FZ2400R17HP4B9HOSA2 is a perfect example of this technology, combining high performance with low loss, making it ideal for a wide range of applications.

Conclusion

The FZ2400R17HP4B9HOSA2 is an ideal solution for a variety of applications, from high-end industrial applications to automotive and consumer applications. Its combination of high-frequency response, ruggedness, high power density and high switching speed make it well suited for demanding applications. Its working principle of using an IGBT module to quickly and efficiently switch high currents makes it a popular choice for many applications.

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