FZ2400R17HE4B9HOSA2

FZ2400R17HE4B9HOSA2 application field and working principle

1. Introduction

   • FZ2400R17HE4B9HOSA2 is an IGBT Module manufactured by Fuji Electric. It is an insulated gate bipolar transistor which is especially suitable for switch-mode power supplies, uninterruptible power supplies and motor drives.

2. Application field

   • FZ2400R17HE4B9HOSA2 is mainly used in inverter and motor drive applications. It is applicable in many modulating and control applications like AC motor drives, DC motor drives, Uninterruptible power supplies, renewable energy, elevator and power generation.
   • The maximum collector current of this module is 2400A and Vces of 1700V.

3. Working Principle

   • IGBT modules are basically three terminal transistors that allow an insulated conduction path between the collector terminal and the emitter terminal. This insulated conduction path is referred to as Gate-Emitter voltage. The gate terminals in IGBTs then control the on and off of the collector and emitter current.
   • When the current flows through the collector to emitter (on state) then the Gate Emitter voltage has to be applied in order to maintain this current path. When the Gate Emitter voltage is cut off then the current path turns off.

4. Advantages of IGBTs

   • The main advantage of using IGBTs is that it offers a larger voltage and current drive capability. It also has lower losses and can be operated at higher switching frequencies. It is capable of handling large power switching in a very small space.
   • Also, the IGBTs are very reliable because of their insulated gate design and their low switching losses. It has fast turn-off characteristics which helps in achieving high switching frequency and lower interference.
   • IGBTs also have a wide operating range due to their wide voltage breakdown rating and high current carrying capacity. Moreover, IGBTs have low thermal resistance which helps in increasing the efficiency of the switching system.