Allicdata Part #: | FZ2400R17HP4B2BOSA2-ND |
Manufacturer Part#: |
FZ2400R17HP4B2BOSA2 |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MODULE IGBT IHMB130-1 |
More Detail: | IGBT Module Trench Field Stop Half Bridge 1700V 48... |
DataSheet: | FZ2400R17HP4B2BOSA2 Datasheet/PDF |
Quantity: | 1000 |
2 +: | $ 0.63000 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 4800A |
Power - Max: | 13000W |
Vce(on) (Max) @ Vge, Ic: | 2.25V @ 15V, 2400A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 195nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FZ2400R17HP4B2BOSA2 is a Transistor – IGBT – Modules module, used in many areas. It is capable of handling very high frequencies and high temperatures, as well as providing high power and exceptional reliability. This article will explore the application fields and working principles of FZ2400R17HP4B2BOSA2.
In terms of application fields, FZ2400R17HP4B2BOSA2 can be used in many different industries. For example, it is popular in industrial automation, automotive, medical, and renewable energy sectors. It can be used for controlling motors, switching and regulating voltage and current levels, and for powering audio amplifiers and medical equipment. Additionally, FZ2400R17HP4B2BOSA2 can be used as a power switching device in power system networks, as well as being used in communication and security systems.
In terms of its working principle, FZ2400R17HP4B2BOSA2 uses an insulated gate bipolar transistor (IGBT) as its main component. An IGBT is a type of transistor that combines the control of a gate-controlled transistor and the high current capability of a bipolar transistor. An IGBT is a three-terminal device, with a gate, collector and emitter. The gate is the control terminal, which is used to control the device’s on and off states. The collector and emitter terminals are connected to the load, or the device that FZ2400R17HP4B2BOSA2 is powering. When a voltage is applied to the gate, the device will reach its “on” state and allow current to pass through. When the voltage is removed, the device will turn off and the current will cease to flow. This is the basic working principle of an IGBT.
FZ2400R17HP4B2BOSA2 is a robust and reliable device, capable of handling very high frequencies, high temperatures, and providing high power. It is used in many different industries and applications, and can be used for motor control, power switching, audio amplifiers, and medical equipment. Its working principle relies on the insulated gate bipolar transistor, a three-terminal device, with a gate, collector and emitter. When a voltage is applied to the gate, current is allowed to pass through, and when the voltage is removed, the current ceases to flow. This article explored the application fields and working principles of FZ2400R17HP4B2BOSA2.
The specific data is subject to PDF, and the above content is for reference
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