FZ2400R12HP4HOSA2

Series:	--
Part Status:	Active
IGBT Type:	--
Configuration:	Single Switch
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	3460A
Power - Max:	12500W
Vce(on) (Max) @ Vge, Ic:	2.05V @ 15V, 2400A
Current - Collector Cutoff (Max):	5mA
Input Capacitance (Cies) @ Vce:	150nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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Introduction
FZ2400R12HP4HOSA2 is a type of integrated gate bipolar transistor (IGBT) module. IGBTs are advantageous when compared to bipolar transistors as they have both good switching speed and high blocking voltage. As one of the most advanced semiconductor devices available, IGBT modules are popular for their many industrial applications, such as in motor control, power systems, automation, renewable energy systems, and lighting. This article will discuss the application field and working principle of FZ2400R12HP4HOSA2 in order to provide a better understanding of its potential benefits.

Application field
Due to their superior performance and properties, FZ2400R12HP4HOSA2 IGBTs are popular for their many industrial applications. In motor control, these modules are especially useful for controlling the rotational speed of a motor. They are also commonly used in power systems, where they can improve power transmission efficiency and provide greater reliability. Additionally, IGBTs can be used in automation, as they allow for precise control of the system based on variables. Some of the other IGBT applications include in renewable energy systems, to provide environmentally-friendly power sources, as well as lighting systems.

Working principle
The working principle of FZ2400R12HP4HOSA2 is based on the integrated design of MOSFET and bipolar transistors. The module consists of three semiconductor devices connected in series, including an N-channel MOSFET, an N-channel IGBT, and a P-channel IGBT. By combining these devices, an integrated gate-bipolar transistor module can be created, as the gate-controlled bipolar transistor will switch on and off when the gate voltage is higher than a certain threshold. Additionally, the gate voltage can also be used to adjust the amount of current that can flow through the module. This makes IGBT modules a valuable solution for various applications, as the amount of power can be easily adjusted.

Conclusion
FZ2400R12HP4HOSA2 is a type of IGBT module with a variety of industrial applications. It has been designed to combine the superior performance of an N-channel MOSFET and two N-channel IGBTs in order to provide an integrated gate-bipolar transistor module. The IGBT module is highly efficient, providing precise control of the system based on variables and allowing for easy adjustments of current. With its many uses and applications, FZ2400R12HP4HOSA2 is a valuable solution for many industrial applications.

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