Allicdata Part #: | 1242-1253-ND |
Manufacturer Part#: |
GA50JT06-258 |
Price: | $ 488.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | TRANS SJT 600V 100A |
More Detail: | 600V 100A (Tc) 769W (Tc) Through Hole TO-258 |
DataSheet: | GA50JT06-258 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 443.83800 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | -- |
Technology: | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 50A |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | 769W (Tc) |
Operating Temperature: | -55°C ~ 225°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-258 |
Package / Case: | TO-258-3, TO-258AA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Modern electronic applications such as power supplies, motor controllers, and robotics rely on transistors to control the flow of electrons in an electrical circuit. Among semiconductor technologies, the most common type of transistor is the metal oxide semiconductor field effect transistor (MOSFET). The GA50JT06-258 is a single N-channel MOSFET resistor with a maximum voltage rating of 50 V. It features a low gate threshold voltage for fast switching, high output current capacity, and low-on-resistance. In this article, we will discuss the application field and working principle of the GA50JT06-258 MOSFET.
Application Field of GA50JT06-258
The GA50JT06-258 MOSFET is a great choice for many power and switching applications. Its low gate threshold voltage and fast switching ability make it ideal for use in DC-DC converters, solenoids, and motor controllers. Its high current capacity and low-on-resistance also make it a great choice for applications where power efficiency is important, such as alternative energy systems. The GA50JT06-258 is also suitable for use in power selection and output switch networks.
Working Principle of GA50JT06-258
The working principle of the GA50JT06-258 MOSFET amplifier is based on the ability of the gate terminal to control the flow of current between the drain and the source terminals. By applying a voltage to the gate terminal, the resistance between the drain and the source is increased or decreased. This control is similar to that of an on-off switch, as the resistance between the drain and the source is either completely open or completely closed, depending on the applied voltage.
The amount of current flowing through the device is determined by the applied voltage on the gate, as well as the drain-source resistance. The gain of the MOSFET amplifier is determined by the voltage applied to the gate divided by the drain-source resistance. The output current is tuned by varying the drain-source resistance, making it an effective and efficient voltage control device.
Conclusion
The GA50JT06-258 MOSFET is an efficient and reliable transistor for use in many electronic power and switching applications. Its low gate threshold voltage and high current rating make it an ideal choice for a range of applications. Its working principle is based on the ability of the gate terminal to control the flow of current between the drain and the source terminals, allowing it to be used as an effective voltage control device. In summary, the GA50JT06-258 is a great choice for many modern electronic applications.
The specific data is subject to PDF, and the above content is for reference
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