GA50JT17-247

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The GA50JT17-247 is part of a family of single field-effect transistor (FET) devices manufactured by Toshiba that are designed to amplify or switch electronic signals. The GA50JT17-247 is a N-Channel enhancement mode MOSFET with low gate charge and low gate-source capacitance. It is designed to operate at voltages between 0V and a maximum of 100V and with drain currents of up to 70mA. It has a low on-resistance of 17 mΩ with a gate threshold voltage of -2V.

A FET is a type of transistor that can be used to control the flow of current through a circuit by controlling the amount of voltage applied to its gate. It is the most commonly used type of transistor and can be found in virtually all digital electronics. MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor and is the most common form of FET. The MOSFET has three terminals--the source, the gate, and the drain--which are used to control the flow of current through the device. The gate terminal controls the amount of bias voltage applied to the gate to determine the flow of current through the device. When a positive voltage is applied to the gate terminal, it increases the potential across the source and drain terminals, allowing the flow of current.

The GA50JT17-247 is an enhancement mode MOSFET, meaning that its optimal operating conditions are with a positive gate bias voltage. A positive gate bias voltage can be applied to the device to increase the current flow through the channel when a voltage is connected across the source and drain terminals. Because the device only requires a small amount of gate charge to operate, it is ideal for applications requiring low-power consumption and high-frequency operation.

The GA50JT17-247 is commonly used in power management applications where low-power consumption and high-frequency operation, such as intermediate frequency switching, is required. It can also be used in high-speed switching circuits and low-power devices. It is also used in pulse power applications and can be used to convert a digital signal into an analog signal in switching applications.

In summary, the GA50JT17-247 is a N-Channel enhancement mode MOSFET with low gate charge. It is used in power management applications where low power consumption and high-frequency operation are required. Its low on-resistance and gate threshold voltage make it an excellent choice for high-speed switching and low-power devices.

The specific data is subject to PDF, and the above content is for reference