GB100XCP12-227 Allicdata Electronics
Allicdata Part #:

1242-1142-ND

Manufacturer Part#:

GB100XCP12-227

Price: $ 154.97
Product Category:

Discrete Semiconductor Products

Manufacturer: GeneSiC Semiconductor
Short Description: IGBT 1200V 100A SOT-227
More Detail: IGBT Module PT Single 1200V 100A Chassis Mount SO...
DataSheet: GB100XCP12-227 datasheetGB100XCP12-227 Datasheet/PDF
Quantity: 27
1 +: $ 140.88100
10 +: $ 134.08200
Stock 27Can Ship Immediately
$ 154.97
Specifications
Series: --
Part Status: Active
IGBT Type: PT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 8.55nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4
Supplier Device Package: SOT-227
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

GB100XCP12-227 Application Field and Working Principle

GB100XCP12-227 is an insulated gate bipolar transistor module that has been developed for high speed switching applications. It combines the high current carrying capacity of a bipolar transistor with the high speed switching capability of an insulated gate bipolar transistor. With its comprehensive range of features, the GB100XCP12-227 makes possible a variety of applications where high speed switching is required.

Application Field

GB100XCP12-227 insulated gate bipolar transistor modules are suitable for a wide range of applications including:

  • Switching of DC loads
  • Inverter designs
  • Motor control applications
  • Switching of AC power lines
  • High frequency chopper circuits

These modules can be used in a variety of applications such as motor control, DC/DC converters, MCU/DSP control, high-power switching, welding power supply units, power supplies and DC/AC hybrid inverters.

Features of GB100XCP12-227

The GB100XCP12-227 offers the following main features:

  • High speed switching
  • Shield-electrode process
  • Surface mount package
  • Operating temperature range of -40 to +125 degrees Celsius
  • Low thermal resistance
  • Low inductance stray capacitance
  • Low di/dt sensitivity
  • High breakdown voltage
  • High surge current capability

Working Principle

The working principle of the GB100XCP12-227 relies on its insulated gate bipolar transistor design. This design uses a gate electrode to activate or deactivate the switching process that occurs between the collector and the source electrodes. During the switching process, the current is transferred from the collector to the source, or alternatively from the source to the collector, depending on the gate voltage.

The GB100XCP12-227 module also features a shield-electrode process that provides superior features such as low di/dt sensitivity, low inductance stray capacitance, and low thermal resistance, allowing the module to operate at high speeds and over a wide temperature range without compromising performance.

In order to ensure optimal performance, it is recommended that the GB100XCP12-227 module is used with a proper gate drive circuit, as this is required for proper switching operation and for protection against over-voltage and over-current conditions.

The specific data is subject to PDF, and the above content is for reference

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