Allicdata Part #: | 1242-1142-ND |
Manufacturer Part#: |
GB100XCP12-227 |
Price: | $ 154.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | IGBT 1200V 100A SOT-227 |
More Detail: | IGBT Module PT Single 1200V 100A Chassis Mount SO... |
DataSheet: | GB100XCP12-227 Datasheet/PDF |
Quantity: | 27 |
1 +: | $ 140.88100 |
10 +: | $ 134.08200 |
Series: | -- |
Part Status: | Active |
IGBT Type: | PT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 100A |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 100A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 8.55nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SOT-227-4 |
Supplier Device Package: | SOT-227 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
GB100XCP12-227 Application Field and Working Principle
GB100XCP12-227 is an insulated gate bipolar transistor module that has been developed for high speed switching applications. It combines the high current carrying capacity of a bipolar transistor with the high speed switching capability of an insulated gate bipolar transistor. With its comprehensive range of features, the GB100XCP12-227 makes possible a variety of applications where high speed switching is required.
Application Field
GB100XCP12-227 insulated gate bipolar transistor modules are suitable for a wide range of applications including:
- Switching of DC loads
- Inverter designs
- Motor control applications
- Switching of AC power lines
- High frequency chopper circuits
These modules can be used in a variety of applications such as motor control, DC/DC converters, MCU/DSP control, high-power switching, welding power supply units, power supplies and DC/AC hybrid inverters.
Features of GB100XCP12-227
The GB100XCP12-227 offers the following main features:
- High speed switching
- Shield-electrode process
- Surface mount package
- Operating temperature range of -40 to +125 degrees Celsius
- Low thermal resistance
- Low inductance stray capacitance
- Low di/dt sensitivity
- High breakdown voltage
- High surge current capability
Working Principle
The working principle of the GB100XCP12-227 relies on its insulated gate bipolar transistor design. This design uses a gate electrode to activate or deactivate the switching process that occurs between the collector and the source electrodes. During the switching process, the current is transferred from the collector to the source, or alternatively from the source to the collector, depending on the gate voltage.
The GB100XCP12-227 module also features a shield-electrode process that provides superior features such as low di/dt sensitivity, low inductance stray capacitance, and low thermal resistance, allowing the module to operate at high speeds and over a wide temperature range without compromising performance.
In order to ensure optimal performance, it is recommended that the GB100XCP12-227 module is used with a proper gate drive circuit, as this is required for proper switching operation and for protection against over-voltage and over-current conditions.
The specific data is subject to PDF, and the above content is for reference
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