
Allicdata Part #: | HIP6503CBZ-ND |
Manufacturer Part#: |
HIP6503CBZ |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Intersil |
Short Description: | IC ACPI MULTI POWER CTRLR 20SOIC |
More Detail: | Processor PMIC 20-SOIC |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Applications: | Processor |
Current - Supply: | 30mA |
Voltage - Supply: | 4.75 V ~ 5.25 V |
Operating Temperature: | 0°C ~ 70°C |
Mounting Type: | Surface Mount |
Package / Case: | 20-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 20-SOIC |
Base Part Number: | HIP6503 |
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PMIC (Power Management Integrated Circuit) is a circuit that transmits the power and regulates components on the boards of various electronic devices. It delivers power to the processors and reduces the amount of current draw from the main power source. One of the more specialized areas is the HIP6503CBZ (30V Direct Drive N-Channel MOSFET). A closer look into its application fields and working principle will be explored in this article.
The HIP6503CBZ is a medium voltage, 30V Direct Drive N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is mainly used in applications that require the delivery of high power for short periods of time. It is a widely used device in systems that need high efficiency, low cost and low noise operation.
Typical applications where the HIP6503CBZ is used include voltage regulator modules, power supply controllers, low-voltage DC/DC converters, automotive sensors, motor control systems, and automated test equipment. The most common use of the HIP6503CBZ is to control the switching of high current, high voltage signals from a micro-controller. It is often used as a low reverse drain-source voltage switch.
The working principle of the HIP6503CBZ is based on the standard MOSFET structure. It has three terminals, source (S), drain (D) and gate (G). The gate terminal is used to control the flow of the current between the source and the gate through the MOSFET. An electric field is created between the gate and the source, controlling the flow of current to the drain. The higher the electric field, the higher the current flow and the higher the drain-source voltage.
The main advantage of the HIP6503CBZ is its high efficiency. This is due to its increased ability to reduce the on-resistance, which allows more current to be drawn from the source and delivered to the load with minimum power loss. This also helps reduce the overall power consumption of the system. In addition, the low on-state resistance and low noise operation of the device enable the system to be more reliable.
The HIP6503CBZ is also known for its low cost and small size compared to other MOSFETs. This makes it an ideal choice for applications where size, cost and performance are important factors. The device also has a variety of features that make it easier to use, such as overload protection, temperature protection, and adjustable over-voltage protection.
In conclusion, the HIP6503CBZ is a specialized, high efficiency, low cost and low noise MOSFET device. It is suitable for applications that require high current, high voltage switching and is used in various applications such as voltage regulator modules, power supply controllers, low-voltage DC/DC converters, automotive sensors, motor control systems, and automated test equipment. The device provides reliable operation and can help to reduce the overall power consumption of the system.
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