HIP6601BCBZ

The HIP6601BCBZ is a part of the PMIC - Gate Drivers series from Intersil Corporation and is designed to provide robust and accurate gate drive for high current MOSFETs and IGBT transistors.

The HIP6601BCBZ is a high-speed, low-noise gate drive with a wide operating voltage range of 3.3V to 18V, high peak output current of 4A, and minimal propagation delay of 7ns. It integrates advanced BiCMOS and gate drive circuit topology to ensure enhanced drive capability and fast data rate. The device is ideally suited for use in high-speed digital applications such as motor control, power conversion and power switching.

The HIP6601BCBZ includes numerous features that deliver performance and ease of use. These features include low noise design, which reduces EMI and eliminates the need for external shielding; a Three-state logic input to turn off the outputs; Under voltage lock-out protection that ensures correct device operation and eliminates false triggering; In-rush current control for preventing potential inrush current issues during turn-on; Thermal shutdown that protects the device from unacceptable temperature; and Damping Resistor, which minimizes ringing and reduces electromagnetic interference (EMI).

HIP6601BCBZ also provides robust safety features such as a current limitation circuitry and a fault flag pin to indicate a fault condition. These features ensure short circuit and over load protection of the load device.

HIP6601BCBZ is an ideal solution for applications such as motor control, power converters, high-current switching, and power supplies.

The HIP6601BCBZ works on the principle of driving a device\'s gate voltage in proportion to the current applied to the device\'s drain. It uses two components to achieve this: a dedicated power transistor and a power MOSFET. The power transistor acts as the voltage control element, controlling the voltage across the device\'s gate. The power MOSFET acts as the current control element, controlling the current that passes through the device\'s drain. By regulating the voltage across the device\'s gate according to the voltage across its drain, the HIP6601BCBZ ensures that the device is correctly driven.

The HIP6601BCBZ provides a wide operating temperature range of -40°C to +125°C and is available in an industry-standard 14-pin Green TSSOP package. It is RoHS compliant and offers an enhanced level of protection against electrostatic discharge and other environmental hazards.

In summary, HIP6601BCBZ is a powerful gate driver in the PMIC - Gate Drivers series from Intersil Corporation, designed to provide robust and reliable gate drive for high current MOSFETs and IGBT transistors. Its superior features, wide operating voltage range, high peak output current and minimal propagation delay make it the ideal solution for high-speed digital applications such as motor control, power conversion and power switching.