HIP6602BCR-T Allicdata Electronics
Allicdata Part #:

HIP6602BCR-T-ND

Manufacturer Part#:

HIP6602BCR-T

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intersil
Short Description: IC DRVR MOSF 2CH SYC BUCK 16-QFN
More Detail: Half-Bridge Gate Driver IC Non-Inverting 16-QFN-EP...
DataSheet: HIP6602BCR-T datasheetHIP6602BCR-T Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Current - Peak Output (Source, Sink): --
Base Part Number: HIP6602B
Supplier Device Package: 16-QFN-EP (5x5)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 20ns, 20ns
High Side Voltage - Max (Bootstrap): 15V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: --
Voltage - Supply: 10.8 V ~ 13.2 V
Gate Type: N-Channel MOSFET
Number of Drivers: 4
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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HIP6602BCR-T is a gate driver designed and manufactured by Intersil, which mainly functions as a power management IC. It is also categorized as a PMIC - gate driver, which is mainly used to transmit electric power signals. HIP6602BCR-T can be used in a variety of fields and applications, mainly due to its ability to control the gate of an N-Channel MOSFET or NPN to achieve the desired effect. This article will focus on the application fields and working principles of HIP6602BCR-T.

HIP6602BCR-T is mainly used for driving N-Channel MOSFET or NPNs in a variety of applications and situations. Owing to its features, such as wide operating temperature range from -40 ℃ to +125 ℃ and low quiescent current consumption (3.0V - 24V, 2mA typical and 2.7mA mechanical dynamic), it can be used in any kind of environment. Thus, it can be used for DC-DC converters, boost or buck converters, switch mode power supplies, lighting control, motor control and automotive applications such as fuel injectors and switching regulators.

It works by providing an internal high and low-side gate drive signal. This internal high and low-side gate drive signal passes through a logic signal, allowing it to control the gates of an N-Channel MOSFET or NPN by giving them a varying amplitude. This control helps to ensure that the gates are switched on and off as per the required input parameters such as the logic signal. This, in turn, enables an effective and efficient application of power, depending on the requirement.

HIP6602BCR-T also have a wide inputs range, which ranges from +0.8V to +13V, allowing it to be used in a variety of applications. It also has built-in overvoltage and undervoltage protection circuitry to protect the circuit and device in case of any abnormalities in the input voltage. Furthermore, it also has a spread spectrum oscillator that reduces EMI and allows the device to be used in noise-sensitive environments.

Apart from being used in automotive, industrial and consumer fields, HIP6602BCR-T can also be used in power sensitive applications. The features such as fast switching frequency, low gate charge and low quiescent current consumption take care of the power loss and efficiency concern, ensuring that it can be used for power sensitive applications. Moreover, its short propagation delay makes it suitable for high-speed applications.

In conclusion, HIP6602BCR-T is a high voltage, low power gate driver that is used primarily for driving N-Channel MOSFET or NPNs. Its built-in features make it suitable for a wide range of applications, from industrial to consumer applications. It is also used in power sensitive applications due to its low power consumption and fast switching frequency. Lastly, it also has built-in protection circuitry which ensures the safety of the device.

The specific data is subject to PDF, and the above content is for reference

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