HMC784MS8G Allicdata Electronics
Allicdata Part #:

HMC784MS8G-ND

Manufacturer Part#:

HMC784MS8G

Price: $ 0.00
Product Category:

RF/IF and RFID

Manufacturer: Analog Devices Inc.
Short Description: IC MMIC GAAS SW SPDT 8MSOP
More Detail: RF Switch IC General Purpose SPDT 4GHz 50 Ohm 8-MS...
DataSheet: HMC784MS8G datasheetHMC784MS8G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Test Frequency: 4GHz
Base Part Number: HMC784
Supplier Device Package: 8-MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3 V ~ 8 V
Impedance: 50 Ohm
Features: --
IIP3: 60dBm
P1dB: 41dBm
Series: --
Insertion Loss: 1.3dB
Isolation: 30dB
Frequency Range: DC ~ 4GHz
Circuit: SPDT
Topology: Reflective
RF Type: General Purpose
Part Status: Obsolete
Packaging: Cut Strip
Description

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RF Switches are widely used in communication and control system. They are versatile devices that enable a user to rapidly switch from one radio frequency (RF) device to another. The HMC784MS8G is one of these versatile RF Switches. This switch features an Low Insertion Loss (Greater than 0.35 dB) as well as an extraordinary RF isolation (Greater than 80 dB). With these characteristics, the HMC784MS8G is ideal for applications such as system gain block, base station switching, gain calibration, broadcast receive, transmit / receive antenna switching, etc.

The working principle of HMC784MS8G RF switch is based on MEMS technology. This technology offers an unparalleled level of integration including high linearity and extreme reliability. The MEMS technology is also highly compact, allowing the design of very small, high speed RF switches with low heat dissipation and miniature size.

The HMC784MS8G is a silicon MEMS 8x8 switch featuring a total of 64 total RF Switch paths over a wideband range of DC to 8 GHz. It also features a very low-loss insertion and absolute isolation greater than 80 dB. It offers a high speed switching time of less than 33 nsec and low affected by Part-to-Part repeatability. This HMC784MS8G RF switch can be used for any number of switching applications.

The HMC784MS8G has several advantages over older technologies. The MEMS technology enables a much higher level of integration of RF signal switching components than was possible with other technologies. This higher integration capability provides great savings on board size and power. The MEMS based switch also offers very high linearity and isolation, and very low loss.

The working principle of the HMC784MS8G is based on the MEMS technology of micro electromechanical systems. This technology can provide an extremely high level of integration of RF switch components, enabling device sizes to be reduced as well as offering greater flexibility of the switch’s operating parameters. The MEMS technology also offers benefits of minimising power consumption, low broadband noise figure, and low resistance to high-frequency switching.

In summary, the HMC784MS8G offers a robust and reliable switch solution for high speed broadband switching applications. Its features of low insertion loss, high isolation and small size make it an ideal choice for any type of RF switching. The HMC784MS8G provides much greater flexibility when compared to other traditional RF Switch technologies, enabling greater cost savings and improved performance.

The specific data is subject to PDF, and the above content is for reference

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